Grain boundaries as preferential sites for resistive switching in the HfO <inf>2</inf> resistive random access memory structures

M. Lanza, K. Zhang, M. Porti, M. Nafria, Z. Y. Shen, L. F. Liu, J. F. Kang, D. Gilmer, G. Bersuker

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Resum

Resistive switching (RS) phenomenon in the HfO 2 dielectric has been indirectly observed at device level in previous studies using metal-insulator-metal structures, but its origin remains unclear. In this work, using the enhanced conductive atomic force microscope (ECAFM), we have been able to obtain in situ direct observation of RS with nanometric resolution. The ECAFM measurements reveal that the conductive filaments exhibiting the RS are primarily formed at the grain boundaries, which were shown exhibiting especially low breakdown voltage due to their intrinsic high density of the oxygen vacancies. © 2012 American Institute of Physics.
Idioma originalEnglish
Número d’article123508
RevistaApplied physics letters
Volum100
DOIs
Estat de la publicacióPublicada - 19 de març 2012

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