Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

A. Fontsere; M. Perez-Tomas; J. Placidi; N. Llobet; S. Baron; Y. Chenot; J. C. Cordier; V. Moreno; M. Iglesias; A. Porti; M. Bayerl; M. Lanza; empty Nafria

doi:10.1063/1.4748115

Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

A. Fontsere, M. Perez-Tomas, J. Placidi, N. Llobet, S. Baron, Y. Chenot, J. C. Cordier, V. Moreno, M. Iglesias, A. Porti, M. Bayerl, M. Lanza, empty Nafria

Departament d'Enginyeria Electrònica

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

18 Cites (Scopus)

Idioma original	Anglès
Pàgines (de-a)	093505-
Revista	Applied physics letters
Volum	101
DOIs	https://doi.org/10.1063/1.4748115
Estat de la publicació	Publicada - 1 de gen. 2012

Accés al document

10.1063/1.4748115

https://ddd.uab.cat/record/117260

Altres arxius i enllaços

https://www.scopus.com/pages/publications/84865840118

Com citar-ho

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title = "Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale",

author = "A. Fontsere and M. Perez-Tomas and J. Placidi and N. Llobet and S. Baron and Y. Chenot and Cordier, \{J. C.\} and V. Moreno and M. Iglesias and A. Porti and M. Bayerl and M. Lanza and empty Nafria",

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journal = "Applied physics letters",

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AU - Fontsere, A.

AU - Perez-Tomas, M.

AU - Placidi, J.

AU - Llobet, N.

AU - Baron, S.

AU - Chenot, Y.

AU - Cordier, J. C.

AU - Moreno, V.

AU - Iglesias, M.

AU - Porti, A.

AU - Bayerl, M.

AU - Lanza, M.

AU - Nafria, empty

PY - 2012/1/1

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UR - https://www.scopus.com/pages/publications/84865840118

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M3 - Article

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VL - 101

SP - 093505-

JO - Applied physics letters

JF - Applied physics letters

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