Gas source molecular beam epitaxy of β-SiC on Si substrates

K. Zekentes, N. Bécourt, M. Androulidaki, K. Tsagaraki, J. Stoemenos, J. M. Bluet, J. Camassel, J. Pascual

Producció científica: Contribució a una revistaArticleRecercaAvaluat per experts

19 Cites (Scopus)


The growth of β-SiC films on Si(100) substrates using C 2 H 2 gas and Si solid sources in a molecular beam epitaxy system has been investigated. Different C 2 H 2 and Si fluxes as well as different substrate temperatures have been used. The growth was performed at two steps: the initial optimal carbonisation step followed by the MBE growth with simultaneous supply of Si molecular and C 2 H 2 gas beams. The films were analysed using reflected high-energy electron diffraction, scanning electron microscopy, transmission electron microscopy, atomic force microscopy and Fourier transform infrared spectroscopy. Thin (< 0.1 μm) single crystalline SiC was grown at 980°C while 850°C was sufficient for the carbonisation of the Si surface. Films thicker than 0.1 μm are partially polycrystalline.
Idioma originalEnglish
Pàgines (de-a)22-27
RevistaApplied Surface Science
Estat de la publicacióPublicada - 1 de gen. 1996


Navegar pels temes de recerca de 'Gas source molecular beam epitaxy of β-SiC on Si substrates'. Junts formen un fingerprint únic.

Com citar-ho