Function-fit model for the soft breakdown failure mode

Enrique Miranda; Jordi Suñé; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich

doi:10.1109/55.767093

Function-fit model for the soft breakdown failure mode

Enrique Miranda, Jordi Suñé, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich

Departament d'Enginyeria Electrònica

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Resum

An empirical one parameter-based power law model for the leakage current through one or more soft breakdown spots in ultrathin (<5 nm) gate oxides is presented. Good fit to data can be obtained in nearly five decades of current from 0.5 to 5 V. In addition, it is shown that there exists a slight correlation between the parameters which describe the soft breakdown conduction characteristic and the stressing condition which triggers it.

Idioma original	Anglès
Pàgines (de-a)	265-267
Revista	IEEE Electron Device Letters
Volum	20
DOIs	https://doi.org/10.1109/55.767093
Estat de la publicació	Publicada - 1 de juny 1999

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10.1109/55.767093

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title = "Function-fit model for the soft breakdown failure mode",

abstract = "An empirical one parameter-based power law model for the leakage current through one or more soft breakdown spots in ultrathin (<5 nm) gate oxides is presented. Good fit to data can be obtained in nearly five decades of current from 0.5 to 5 V. In addition, it is shown that there exists a slight correlation between the parameters which describe the soft breakdown conduction characteristic and the stressing condition which triggers it.",

author = "Enrique Miranda and Jordi Su{\~n}{\'e} and Rosana Rodr{\'i}guez and Montserrat Nafr{\'i}a and Xavier Aymerich",

year = "1999",

month = jun,

day = "1",

doi = "10.1109/55.767093",

language = "English",

volume = "20",

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journal = "IEEE Electron Device Letters",

issn = "0741-3106",

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T1 - Function-fit model for the soft breakdown failure mode

AU - Miranda, Enrique

AU - Suñé, Jordi

AU - Rodríguez, Rosana

AU - Nafría, Montserrat

AU - Aymerich, Xavier

PY - 1999/6/1

Y1 - 1999/6/1

N2 - An empirical one parameter-based power law model for the leakage current through one or more soft breakdown spots in ultrathin (<5 nm) gate oxides is presented. Good fit to data can be obtained in nearly five decades of current from 0.5 to 5 V. In addition, it is shown that there exists a slight correlation between the parameters which describe the soft breakdown conduction characteristic and the stressing condition which triggers it.

AB - An empirical one parameter-based power law model for the leakage current through one or more soft breakdown spots in ultrathin (<5 nm) gate oxides is presented. Good fit to data can be obtained in nearly five decades of current from 0.5 to 5 V. In addition, it is shown that there exists a slight correlation between the parameters which describe the soft breakdown conduction characteristic and the stressing condition which triggers it.

U2 - 10.1109/55.767093

DO - 10.1109/55.767093

M3 - Article

SN - 0741-3106

VL - 20

SP - 265

EP - 267

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

Function-fit model for the soft breakdown failure mode

Resum

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