Flexible Antiferromagnetic FeRh Tapes as Memory Elements

Ignasi Fina; Nico Dix; Enric Menéndez; Anna Crespi; Michael Foerster; Lucia Aballe; Florencio Sánchez; Josep Fontcuberta

doi:10.1021/acsami.0c00704

Flexible Antiferromagnetic FeRh Tapes as Memory Elements

Ignasi Fina^*, Nico Dix, Enric Menéndez, Anna Crespi, Michael Foerster, Lucia Aballe, Florencio Sánchez, Josep Fontcuberta

^*Autor corresponent d’aquest treball

Departament de Física

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

19 Cites (Scopus)

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The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and untraceable data storage. Here, we show that FeRh films can be grown on a flexible metallic substrate (tape shaped), coated with a textured rock-salt MgO layer, suitable for large-scale applications. The FeRh tape displays a sharp antiferromagnetic to ferromagnetic transition at about 90 °C. Its magnetic properties are preserved by bending (radii of 300 mm), and their anisotropic magnetoresistance (up to 0.05%) is used to illustrate data writing/reading capability.

Idioma original	Anglès
Pàgines (de-a)	15389-15395
Nombre de pàgines	7
Revista	ACS Applied Materials and Interfaces
Volum	12
Número	13
DOIs	https://doi.org/10.1021/acsami.0c00704
Estat de la publicació	Publicada - 1 d’abr. 2020

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title = "Flexible Antiferromagnetic FeRh Tapes as Memory Elements",

abstract = "The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and untraceable data storage. Here, we show that FeRh films can be grown on a flexible metallic substrate (tape shaped), coated with a textured rock-salt MgO layer, suitable for large-scale applications. The FeRh tape displays a sharp antiferromagnetic to ferromagnetic transition at about 90 °C. Its magnetic properties are preserved by bending (radii of 300 mm), and their anisotropic magnetoresistance (up to 0.05\%) is used to illustrate data writing/reading capability.",

keywords = "antiferromagnetic spintronics, FeRh, flexible electronics, flexible magnets, thin films",

author = "Ignasi Fina and Nico Dix and Enric Men{\'e}ndez and Anna Crespi and Michael Foerster and Lucia Aballe and Florencio S{\'a}nchez and Josep Fontcuberta",

note = "Publisher Copyright: Copyright {\textcopyright} 2020 American Chemical Society.",

year = "2020",

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doi = "10.1021/acsami.0c00704",

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T1 - Flexible Antiferromagnetic FeRh Tapes as Memory Elements

AU - Fina, Ignasi

AU - Dix, Nico

AU - Menéndez, Enric

AU - Crespi, Anna

AU - Foerster, Michael

AU - Aballe, Lucia

AU - Sánchez, Florencio

AU - Fontcuberta, Josep

PY - 2020/4/1

Y1 - 2020/4/1

N2 - The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and untraceable data storage. Here, we show that FeRh films can be grown on a flexible metallic substrate (tape shaped), coated with a textured rock-salt MgO layer, suitable for large-scale applications. The FeRh tape displays a sharp antiferromagnetic to ferromagnetic transition at about 90 °C. Its magnetic properties are preserved by bending (radii of 300 mm), and their anisotropic magnetoresistance (up to 0.05%) is used to illustrate data writing/reading capability.

AB - The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and untraceable data storage. Here, we show that FeRh films can be grown on a flexible metallic substrate (tape shaped), coated with a textured rock-salt MgO layer, suitable for large-scale applications. The FeRh tape displays a sharp antiferromagnetic to ferromagnetic transition at about 90 °C. Its magnetic properties are preserved by bending (radii of 300 mm), and their anisotropic magnetoresistance (up to 0.05%) is used to illustrate data writing/reading capability.

KW - antiferromagnetic spintronics

KW - FeRh

KW - flexible electronics

KW - flexible magnets

KW - thin films

UR - https://www.scopus.com/pages/publications/85082780061

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DO - 10.1021/acsami.0c00704

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AN - SCOPUS:85082780061

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EP - 15395

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

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ER -

Flexible Antiferromagnetic FeRh Tapes as Memory Elements

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