Resum
In this paper we present a different approach using a focused ion beam (FIB) as lithographic tool to define nanometric width gaps, which are then transferred to a silicon substrate by reactive ion etching (RIE). This process has been developed to fit the technological requirements for micro- and nano-electromechanicals systems (M-NEMS) applications. © 2007 Elsevier B.V. All rights reserved.
Idioma original | Anglès |
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Pàgines (de-a) | 1215-1218 |
Revista | Microelectronic Engineering |
Volum | 84 |
DOIs | |
Estat de la publicació | Publicada - 1 de maig 2007 |