Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge

F. Jimenez-Molinos; H. Garcia; M. B. Gonzalez; S. Duenas; H. Castan; E. Miranda; F. Campabadal; J. B. Roldan

doi:10.1109/CDE52135.2021.9455756

Fabrication, characterization and modeling of TiN/Ti/HfO₂/W memristors: Programming based on an external capacitor discharge

F. Jimenez-Molinos, H. Garcia, M. B. Gonzalez, S. Duenas, H. Castan, E. Miranda, F. Campabadal, J. B. Roldan

Departament d'Enginyeria Electrònica

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Resum

Hafnium oxide based memristors were fabricated and multilevel programming driven by a capacitor discharge current through the device was performed. Furthermore, the dynamic memdiode model was used for modeling and analyzing the experimental data.

Idioma original	English
Pàgines (de-a)	74-77
Nombre de pàgines	4
Revista	Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
DOIs	https://doi.org/10.1109/CDE52135.2021.9455756
Estat de la publicació	Publicada - 9 de juny 2021

Accés al document

10.1109/CDE52135.2021.9455756

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Enllaç a la publicació de Scopus

Com citar-ho

Jimenez-Molinos, F., Garcia, H., Gonzalez, M. B., Duenas, S., Castan, H., Miranda, E., Campabadal, F., & Roldan, J. B. (2021). Fabrication, characterization and modeling of TiN/Ti/HfO₂/W memristors: Programming based on an external capacitor discharge. Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021, 74-77. https://doi.org/10.1109/CDE52135.2021.9455756

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title = "Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge",

abstract = "Hafnium oxide based memristors were fabricated and multilevel programming driven by a capacitor discharge current through the device was performed. Furthermore, the dynamic memdiode model was used for modeling and analyzing the experimental data.",

keywords = "capacitor, memristor, resistive-switching device, set/reset processes",

author = "F. Jimenez-Molinos and H. Garcia and Gonzalez, {M. B.} and S. Duenas and H. Castan and E. Miranda and F. Campabadal and Roldan, {J. B.}",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.",

year = "2021",

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doi = "10.1109/CDE52135.2021.9455756",

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Jimenez-Molinos, F, Garcia, H, Gonzalez, MB, Duenas, S, Castan, H, Miranda, E, Campabadal, F & Roldan, JB 2021, 'Fabrication, characterization and modeling of TiN/Ti/HfO₂/W memristors: Programming based on an external capacitor discharge', Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021, pàg. 74-77. https://doi.org/10.1109/CDE52135.2021.9455756

Fabrication, characterization and modeling of TiN/Ti/HfO₂/W memristors: Programming based on an external capacitor discharge. / Jimenez-Molinos, F.; Garcia, H.; Gonzalez, M. B. et al.
In: Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021, 09.06.2021, pàg. 74-77.

Producció científica: Contribució a una revista › Article › Recerca › Avaluat per experts

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AU - Duenas, S.

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AU - Campabadal, F.

AU - Roldan, J. B.

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KW - set/reset processes

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