Extended abstracts of the Abstracts of the 1998 International Conference od Solid State Devices and Materials (SSDM'98)."Experimental Study of the Soft Breakdown I-V Characteristics in Ultrathin SiO2 Layers": 1998 International Conference od Solid State Devices and Materials (SSDM'98).

E. Miranda; J. Suñé; R. Rodríguez; M. Nafría; F. Martín; Japan Society of Applied Physics

Extended abstracts of the Abstracts of the 1998 International Conference od Solid State Devices and Materials (SSDM'98)."Experimental Study of the Soft Breakdown I-V Characteristics in Ultrathin SiO2 Layers": 1998 International Conference od Solid State Devices and Materials (SSDM'98).

E. Miranda, J. Suñé, R. Rodríguez, M. Nafría, F. Martín, Japan Society of Applied Physics (Editor)

Departament d'Enginyeria Electrònica

Producció científica: LLibre/informe › Llibre d'Actes › Recerca

Idioma original	No s'ha definit/desconegut
Lloc de publicació	Hiroshima (JP)
Nombre de pàgines	2
Estat de la publicació	Publicada - de juny 1998

Com citar-ho

Miranda, E., Suñé, J., Rodríguez, R., Nafría, M., Martín, F., & Physics, J. S. O. A. (Ed.) (1998). Extended abstracts of the Abstracts of the 1998 International Conference od Solid State Devices and Materials (SSDM'98)."Experimental Study of the Soft Breakdown I-V Characteristics in Ultrathin SiO2 Layers": 1998 International Conference od Solid State Devices and Materials (SSDM'98).

Miranda, E. ; Suñé, J. ; Rodríguez, R. et al. / Extended abstracts of the Abstracts of the 1998 International Conference od Solid State Devices and Materials (SSDM'98)."Experimental Study of the Soft Breakdown I-V Characteristics in Ultrathin SiO2 Layers" : 1998 International Conference od Solid State Devices and Materials (SSDM'98). Hiroshima (JP), 1998. 2 pàg.

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author = "E. Miranda and J. Su{\~n}{\'e} and R. Rodr{\'i}guez and M. Nafr{\'i}a and F. Mart{\'i}n",

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Miranda, E, Suñé, J , Rodríguez, R , Nafría, M , Martín, F & Physics, JSOA (ed.) 1998, Extended abstracts of the Abstracts of the 1998 International Conference od Solid State Devices and Materials (SSDM'98)."Experimental Study of the Soft Breakdown I-V Characteristics in Ultrathin SiO2 Layers": 1998 International Conference od Solid State Devices and Materials (SSDM'98). Hiroshima (JP).

Extended abstracts of the Abstracts of the 1998 International Conference od Solid State Devices and Materials (SSDM'98)."Experimental Study of the Soft Breakdown I-V Characteristics in Ultrathin SiO2 Layers": 1998 International Conference od Solid State Devices and Materials (SSDM'98). / Miranda, E.; Suñé, J.; Rodríguez, R. et al.
Hiroshima (JP), 1998. 2 pàg.

Producció científica: LLibre/informe › Llibre d'Actes › Recerca

TY - BOOK

T1 - Extended abstracts of the Abstracts of the 1998 International Conference od Solid State Devices and Materials (SSDM'98)."Experimental Study of the Soft Breakdown I-V Characteristics in Ultrathin SiO2 Layers"

T2 - 1998 International Conference od Solid State Devices and Materials (SSDM'98).

AU - Miranda, E.

AU - Suñé, J.

AU - Rodríguez, R.

AU - Nafría, M.

AU - Martín, F.

A2 - Physics, Japan Society of Applied

PY - 1998/6

Y1 - 1998/6

M3 - Libro de Actas

BT - Extended abstracts of the Abstracts of the 1998 International Conference od Solid State Devices and Materials (SSDM'98)."Experimental Study of the Soft Breakdown I-V Characteristics in Ultrathin SiO2 Layers"

CY - Hiroshima (JP)

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Miranda E, Suñé J , Rodríguez R , Nafría M , Martín F, Physics JSOA, (ed.). Extended abstracts of the Abstracts of the 1998 International Conference od Solid State Devices and Materials (SSDM'98)."Experimental Study of the Soft Breakdown I-V Characteristics in Ultrathin SiO2 Layers": 1998 International Conference od Solid State Devices and Materials (SSDM'98). Hiroshima (JP), 1998. 2 pàg.