Explicit model for direct tunneling current in double-gate MOSFETs through a dielectric stack

Keyphrases

• Band Offset 50%
• Benchmark Testing 50%
• Circuit Simulator 50%
• Closed-form Expression 50%
• Dielectric Constant 50%
• Dielectric Stack 100%
• Direct Tunneling Current 100%
• Double Gate Structure 50%
• Double-gate MOSFET 100%
• Dual-layer 50%
• Electrical Circuits 50%
• Explicit Model 100%
• Fast Evaluation 50%
• Gate Leakage 100%
• Gate Stack 50%
• Gate Tunneling 50%
• High-k Dielectric 50%
• International Technology Roadmap for Semiconductors 50%
• Numerical Solution 50%
• Poisson Equation 50%
• Quantum Model 50%
• Schrdinger 50%
• Silica 50%

Material Science

• Band Offset 100%
• Dielectric Material 100%
• Electronic Circuit 100%
• High-K Dielectric 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Permittivity 100%

Engineering

• Band Offset 33%
• Closed Form Expression 33%
• Dielectrics 100%
• Direct Tunneling 100%
• Electrical Circuit 33%
• Gate Stack 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Numerical Solution 33%
• Tunnel Construction 33%