@inbook{46832aff7e474adeae99c956c2646fb2,
title = "Equivalent circuit model for the electron transport in 2D resistive switching material systems",
abstract = "A compact model for the low and high resistance state conduction characteristics of electroformed capacitors with hexagonal boron nitride (A-BN) as insulator material and with multi-layer graphene and metal electrodes is presented. The model arises from an approximation of the expression for multi-filamentary electron transport with parabolic shaped constrictions. The model takes into account the parallel contribution of partially and fully formed localized current pathways spanning the two-dimensional (2D) film characterized by transmission coefficients T<1 and T=1, respectively. It is shown how the resulting physical equation for a highly asymmetric constriction can be linked to an equivalent electrical circuit. The proposed approach unveils the connection between filamentary electron transport and diode-like conduction in resistive switching (RS) devices.",
keywords = "Boron Nitride, Graphene, Resistive Switching",
author = "E. Miranda and J. Sune and C. Pan and M. Villena and N. Xiao and M. Lanza",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.",
year = "2017",
month = oct,
day = "12",
doi = "10.1109/ESSDERC.2017.8066598",
language = "English",
isbn = "978-1-5090-5979-9",
series = "European Solid-State Device Research Conference",
pages = "86--89",
booktitle = "2017 47th European Solid-State Device Research Conference (ESSDERC)",
}