Electrical characterization at a nanometer scale of weak spots in irradiated SiO2 gate oxides

M. Porti, M. Nafría, X. Aymerich, A. Cester, A. Paccagnella, S. Cimino

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Idioma original	Anglès
Pàgines (de-a)	1457-1461
Revista	IEEE Transactions on Nuclear Science
Volum	52
Número	5
DOIs	https://doi.org/10.1109/TNS.2005.855647
Estat de la publicació	Publicada - 1 de gen. 2005

Accés al document

@article{6a86ac07e5074eefb8e6ac20221e145d,

title = "Electrical characterization at a nanometer scale of weak spots in irradiated SiO2 gate oxides",

author = "M. Porti and M. Nafr{\'i}a and X. Aymerich and A. Cester and A. Paccagnella and S. Cimino",

year = "2005",

month = jan,

day = "1",

doi = "10.1109/TNS.2005.855647",

language = "English",

volume = "52",

pages = "1457--1461",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Electrical characterization at a nanometer scale of weak spots in irradiated SiO2 gate oxides

AU - Porti, M.

AU - Nafría, M.

AU - Aymerich, X.

AU - Cester, A.

AU - Paccagnella, A.

AU - Cimino, S.

PY - 2005/1/1

Y1 - 2005/1/1

U2 - 10.1109/TNS.2005.855647

DO - 10.1109/TNS.2005.855647

M3 - Article

SN - 0018-9499

VL - 52

SP - 1457

EP - 1461

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 5

ER -