Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays

Keyphrases

• Electrical Characterization 100%
• Electrical Modeling 100%
• Memory Array 100%
• Resistive Random Access Memory (ReRAM) 100%
• Pulse-like 100%
• Forming Techniques 100%
• Cellular Heterogeneity 66%
• Post-forming 66%
• System Level 33%
• Energy Saving 33%
• Operative 33%
• Strong Impact 33%
• Reset Operation 33%
• Cell Performance 33%
• Switching Behavior 33%
• Current Distribution 33%
• Forming Process 33%
• Switching Voltage 33%
• Overall Time 33%
• Overall Energy 33%
• Trapezoidal Wave 33%
• Pulse Form 33%
• Forming Time 33%
• Incremental Forming 33%

Engineering

• Resistive Random Access Memory 100%
• Memory Array 100%
• Cell Performance 33%
• Reset Operation 33%
• Incremental Form 33%
• Current Distribution 33%