Electrical characterization and fabrication of SiO<inf>2</inf> based metal-oxide-semiconductor nanoelectronic devices with atomic force microscopy

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Resum

Atomic force microscopy (AFM) has been used to fabricate and electrically characterize SiO2 films as gate dielectrics of metal-oxide-semiconductor (MOS) electronic devices. The electrical properties of the AFM grown oxide (3 nm thick) have been determined at a nanometric scale and compared to those of thermal gate oxides (GOXs). The results show a similar electrical behaviour of both kinds of oxide. Furthermore, the broken down GOX locations (breakdown spots) induced in microelectronic-sized devices have been located and electrically characterized with AFM. The results indicate that AFM is a suitable tool for the fabrication and reliability analysis of present and future Si/SiO2 based MOS nanoelectronic devices.
Idioma originalEnglish
Pàgines (de-a)584-587
RevistaNanotechnology
Volum14
DOIs
Estat de la publicacióPublicada - 1 de juny 2003

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