Electric-field control of exchange bias in multiferroic epitaxial heterostructures

V. Laukhin; V. Skumryev; X. Martí; D. Hrabovsky; F. Sánchez; M. V. García-Cuenca; C. Ferrater; M. Varela; U. Lüders; J. F. Bobo; J. Fontcuberta

doi:10.1103/PhysRevLett.97.227201

Electric-field control of exchange bias in multiferroic epitaxial heterostructures

V. Laukhin, V. Skumryev, X. Martí, D. Hrabovsky, F. Sánchez, M. V. García-Cuenca, C. Ferrater, M. Varela, U. Lüders, J. F. Bobo, J. Fontcuberta

Departament de Física

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The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an electric field allows control of the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to paving the way towards a new generation of electric-field controlled spintronic devices. © 2006 The American Physical Society.

Idioma original	Anglès
Número d’article	227201
Revista	Physical Review Letters
Volum	97
DOIs	https://doi.org/10.1103/PhysRevLett.97.227201
Estat de la publicació	Publicada - 4 de des. 2006

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10.1103/PhysRevLett.97.227201

https://ddd.uab.cat/record/114266

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@article{6190182e8a2a48eeba3e6ea2acc9571a,

title = "Electric-field control of exchange bias in multiferroic epitaxial heterostructures",

abstract = "The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an electric field allows control of the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to paving the way towards a new generation of electric-field controlled spintronic devices. {\textcopyright} 2006 The American Physical Society.",

author = "V. Laukhin and V. Skumryev and X. Mart{\'i} and D. Hrabovsky and F. S{\'a}nchez and Garc{\'i}a-Cuenca, \{M. V.\} and C. Ferrater and M. Varela and U. L{\"u}ders and Bobo, \{J. F.\} and J. Fontcuberta",

year = "2006",

month = dec,

day = "4",

doi = "10.1103/PhysRevLett.97.227201",

language = "English",

volume = "97",

}

TY - JOUR

T1 - Electric-field control of exchange bias in multiferroic epitaxial heterostructures

AU - Laukhin, V.

AU - Skumryev, V.

AU - Martí, X.

AU - Hrabovsky, D.

AU - Sánchez, F.

AU - García-Cuenca, M. V.

AU - Ferrater, C.

AU - Varela, M.

AU - Lüders, U.

AU - Bobo, J. F.

AU - Fontcuberta, J.

PY - 2006/12/4

Y1 - 2006/12/4

N2 - The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an electric field allows control of the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to paving the way towards a new generation of electric-field controlled spintronic devices. © 2006 The American Physical Society.

AB - The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an electric field allows control of the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to paving the way towards a new generation of electric-field controlled spintronic devices. © 2006 The American Physical Society.

UR - https://www.scopus.com/pages/publications/34247881602

U2 - 10.1103/PhysRevLett.97.227201

DO - 10.1103/PhysRevLett.97.227201

M3 - Article

SN - 0031-9007

VL - 97

JO - Physical Review Letters

JF - Physical Review Letters

M1 - 227201

ER -

Electric-field control of exchange bias in multiferroic epitaxial heterostructures

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