Effect of gate-all-around transistor geometry on the high-frequency noise: Analytical Discussion

A. Benali; F. L. Traversa; G. Albareda; A. AlarcÓn; M. Aghoutane; X. Oriols

doi:10.1142/S0219477512410027

Effect of gate-all-around transistor geometry on the high-frequency noise: Analytical Discussion

A. Benali, F. L. Traversa, G. Albareda, A. AlarcÓn, M. Aghoutane, X. Oriols

Departament d'Enginyeria Electrònica

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Resum

By means of the Ramo-Shockley-Pellegrini theorem, an analytical discussion on how different geometries of gate-all-around 1D ballistic transistors affect their time-dependent current and their (intrinsic) high-frequency noise spectrum is presented. In particular, it is shown that the frequency range where the high-frequency noise spectrum is meaningful increases when the lateral area is decreased. © 2012 World Scientific Publishing Company.

Idioma original	Anglès
Número d’article	1241002
Revista	Fluctuation and Noise Letters
Volum	11
Número	3
DOIs	https://doi.org/10.1142/S0219477512410027
Estat de la publicació	Publicada - 1 de set. 2012

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10.1142/S0219477512410027

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title = "Effect of gate-all-around transistor geometry on the high-frequency noise: Analytical Discussion",

abstract = "By means of the Ramo-Shockley-Pellegrini theorem, an analytical discussion on how different geometries of gate-all-around 1D ballistic transistors affect their time-dependent current and their (intrinsic) high-frequency noise spectrum is presented. In particular, it is shown that the frequency range where the high-frequency noise spectrum is meaningful increases when the lateral area is decreased. {\textcopyright} 2012 World Scientific Publishing Company.",

keywords = "gate-all-around transistor, High-frequency noise, Ramo-Shockley-Pellegrini theorem",

author = "A. Benali and Traversa, {F. L.} and G. Albareda and A. Alarc{\'O}n and M. Aghoutane and X. Oriols",

year = "2012",

month = sep,

day = "1",

doi = "10.1142/S0219477512410027",

language = "English",

volume = "11",

journal = "Fluctuation and Noise Letters",

issn = "0219-4775",

publisher = "World Scientific Publishing Co. Pte Ltd",

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TY - JOUR

T1 - Effect of gate-all-around transistor geometry on the high-frequency noise: Analytical Discussion

AU - Benali, A.

AU - Traversa, F. L.

AU - Albareda, G.

AU - AlarcÓn, A.

AU - Aghoutane, M.

AU - Oriols, X.

PY - 2012/9/1

Y1 - 2012/9/1

N2 - By means of the Ramo-Shockley-Pellegrini theorem, an analytical discussion on how different geometries of gate-all-around 1D ballistic transistors affect their time-dependent current and their (intrinsic) high-frequency noise spectrum is presented. In particular, it is shown that the frequency range where the high-frequency noise spectrum is meaningful increases when the lateral area is decreased. © 2012 World Scientific Publishing Company.

AB - By means of the Ramo-Shockley-Pellegrini theorem, an analytical discussion on how different geometries of gate-all-around 1D ballistic transistors affect their time-dependent current and their (intrinsic) high-frequency noise spectrum is presented. In particular, it is shown that the frequency range where the high-frequency noise spectrum is meaningful increases when the lateral area is decreased. © 2012 World Scientific Publishing Company.

KW - gate-all-around transistor

KW - High-frequency noise

KW - Ramo-Shockley-Pellegrini theorem

U2 - 10.1142/S0219477512410027

DO - 10.1142/S0219477512410027

M3 - Review article

SN - 0219-4775

VL - 11

JO - Fluctuation and Noise Letters

JF - Fluctuation and Noise Letters

IS - 3

M1 - 1241002

ER -

Effect of gate-all-around transistor geometry on the high-frequency noise: Analytical Discussion

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