Domain matching epitaxy of ferrimagnetic CoFe<inf>2</inf>O<inf>4</inf> thin films on Sc<inf>2</inf>O<inf>3</inf>/Si(111)

F. Snchez; R. Bachelet; P. De Coux; B. Warot-Fonrose; V. Skumryev; L. Tarnawska; P. Zaumseil; T. Schroeder; J. Fontcuberta

doi:10.1063/1.3663216

Domain matching epitaxy of ferrimagnetic CoFe<inf>2</inf>O<inf>4</inf> thin films on Sc<inf>2</inf>O<inf>3</inf>/Si(111)

F. Snchez, R. Bachelet, P. De Coux, B. Warot-Fonrose, V. Skumryev, L. Tarnawska, P. Zaumseil, T. Schroeder, J. Fontcuberta

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Ferrimagnetic spinel CoFe2O4 (CFO) films are integrated with Si(111) using Sc2O3 buffer layers. The huge lattice mismatch (17) between CFO and Sc2O3 is accommodated by domain matching, and CFO grows epitaxially with (111) out-of-plane orientation and coexistence of A- and B-type in-plane crystal variants. CFO films have low roughness of 4 and saturation magnetization of about 300 emu/cm3. These properties make CFO films on Sc 2O3-buffered Si(111) comparable to those grown on oxide single crystals and thus extend the possibilities of using spinel oxides in electronic devices. © 2011 American Institute of Physics.

Idioma original	Anglès
Número d’article	211910
Revista	Applied physics letters
Volum	99
DOIs	https://doi.org/10.1063/1.3663216
Estat de la publicació	Publicada - 21 de nov. 2011

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10.1063/1.3663216

https://ddd.uab.cat/record/107330

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@article{771bd6fc20564a59a563fdf1fd6f2b3a,

title = "Domain matching epitaxy of ferrimagnetic CoFe2O4 thin films on Sc2O3/Si(111)",

abstract = "Ferrimagnetic spinel CoFe2O4 (CFO) films are integrated with Si(111) using Sc2O3 buffer layers. The huge lattice mismatch (17) between CFO and Sc2O3 is accommodated by domain matching, and CFO grows epitaxially with (111) out-of-plane orientation and coexistence of A- and B-type in-plane crystal variants. CFO films have low roughness of 4 and saturation magnetization of about 300 emu/cm3. These properties make CFO films on Sc 2O3-buffered Si(111) comparable to those grown on oxide single crystals and thus extend the possibilities of using spinel oxides in electronic devices. {\textcopyright} 2011 American Institute of Physics.",

author = "F. Snchez and R. Bachelet and {De Coux}, P. and B. Warot-Fonrose and V. Skumryev and L. Tarnawska and P. Zaumseil and T. Schroeder and J. Fontcuberta",

year = "2011",

month = nov,

day = "21",

doi = "10.1063/1.3663216",

language = "English",

volume = "99",

journal = "Applied physics letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Domain matching epitaxy of ferrimagnetic CoFe2O4 thin films on Sc2O3/Si(111)

AU - Snchez, F.

AU - Bachelet, R.

AU - De Coux, P.

AU - Warot-Fonrose, B.

AU - Skumryev, V.

AU - Tarnawska, L.

AU - Zaumseil, P.

AU - Schroeder, T.

AU - Fontcuberta, J.

PY - 2011/11/21

Y1 - 2011/11/21

N2 - Ferrimagnetic spinel CoFe2O4 (CFO) films are integrated with Si(111) using Sc2O3 buffer layers. The huge lattice mismatch (17) between CFO and Sc2O3 is accommodated by domain matching, and CFO grows epitaxially with (111) out-of-plane orientation and coexistence of A- and B-type in-plane crystal variants. CFO films have low roughness of 4 and saturation magnetization of about 300 emu/cm3. These properties make CFO films on Sc 2O3-buffered Si(111) comparable to those grown on oxide single crystals and thus extend the possibilities of using spinel oxides in electronic devices. © 2011 American Institute of Physics.

AB - Ferrimagnetic spinel CoFe2O4 (CFO) films are integrated with Si(111) using Sc2O3 buffer layers. The huge lattice mismatch (17) between CFO and Sc2O3 is accommodated by domain matching, and CFO grows epitaxially with (111) out-of-plane orientation and coexistence of A- and B-type in-plane crystal variants. CFO films have low roughness of 4 and saturation magnetization of about 300 emu/cm3. These properties make CFO films on Sc 2O3-buffered Si(111) comparable to those grown on oxide single crystals and thus extend the possibilities of using spinel oxides in electronic devices. © 2011 American Institute of Physics.

U2 - 10.1063/1.3663216

DO - 10.1063/1.3663216

M3 - Article

SN - 0003-6951

VL - 99

JO - Applied physics letters

JF - Applied physics letters

M1 - 211910

ER -

Domain matching epitaxy of ferrimagnetic CoFe<inf>2</inf>O<inf>4</inf> thin films on Sc<inf>2</inf>O<inf>3</inf>/Si(111)

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