Distinguishing conductive filament and non-localized gate conduction in resistive switching devices

M. Maestro; A. Crespo-Yepes; J. Martin-Martinez; S. Claramunt; R. Rodriguez; M. Nafria; X. Aymerich

Distinguishing conductive filament and non-localized gate conduction in resistive switching devices

M. Maestro, A. Crespo-Yepes, J. Martin-Martinez, S. Claramunt, R. Rodriguez, M. Nafria, X. Aymerich

Departament d'Enginyeria Electrònica

Producció científica: Capítol de llibre › Capítol › Recerca › Avaluat per experts

Resum

A method to separate the localized current through the conductive filament from the area distributed gate current at high resistance state in resistive switching (RS) devices is presented. The method uses MOSFETs as RS devices and it is based in the evaluation of the location of the filament along the transistor channel

Idioma original	Anglès
Títol de la publicació	Proceedings of the 2015 10th Spanish Conference on Electron Devices (Cde)
Estat de la publicació	Publicada - 2015

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title = "Distinguishing conductive filament and non-localized gate conduction in resistive switching devices",

abstract = "A method to separate the localized current through the conductive filament from the area distributed gate current at high resistance state in resistive switching (RS) devices is presented. The method uses MOSFETs as RS devices and it is based in the evaluation of the location of the filament along the transistor channel",

author = "M. Maestro and A. Crespo-Yepes and J. Martin-Martinez and S. Claramunt and R. Rodriguez and M. Nafria and X. Aymerich",

year = "2015",

language = "English",

isbn = "978-1-4799-8108-3",

booktitle = "Proceedings of the 2015 10th Spanish Conference on Electron Devices (Cde)",

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T1 - Distinguishing conductive filament and non-localized gate conduction in resistive switching devices

AU - Maestro, M.

AU - Crespo-Yepes, A.

AU - Martin-Martinez, J.

AU - Claramunt, S.

AU - Rodriguez, R.

AU - Nafria, M.

AU - Aymerich, X.

PY - 2015

Y1 - 2015

N2 - A method to separate the localized current through the conductive filament from the area distributed gate current at high resistance state in resistive switching (RS) devices is presented. The method uses MOSFETs as RS devices and it is based in the evaluation of the location of the filament along the transistor channel

AB - A method to separate the localized current through the conductive filament from the area distributed gate current at high resistance state in resistive switching (RS) devices is presented. The method uses MOSFETs as RS devices and it is based in the evaluation of the location of the filament along the transistor channel

UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000380443300036&KeyUID=WOS:000380443300036

M3 - Chapter

SN - 978-1-4799-8108-3

BT - Proceedings of the 2015 10th Spanish Conference on Electron Devices (Cde)

ER -

Distinguishing conductive filament and non-localized gate conduction in resistive switching devices

Resum

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