Distinguishing conductive filament and non-localized gate conduction in resistive switching devices

M. Maestro, A. Crespo-Yepes, J. Martin-Martinez, S. Claramunt, R. Rodriguez, M. Nafria, X. Aymerich

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Resum

A method to separate the localized current through the conductive filament from the area distributed gate current at high resistance state in resistive switching (RS) devices is presented. The method uses MOSFETs as RS devices and it is based in the evaluation of the location of the filament along the transistor channel
Idioma originalEnglish
Títol de la publicacióProceedings of the 2015 10th Spanish Conference on Electron Devices (Cde)
Estat de la publicacióPublicada - 2015

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