TY - CHAP
T1 - Deterministic kinetic solvers for charged particle transport in semiconductor devices
AU - Cáceres, M. J.
AU - Carrillo, J. A.
AU - Gamba, I. M.
AU - Majorana, A.
AU - Shu, C. W.
PY - 2007/1/1
Y1 - 2007/1/1
N2 - © 2007, Birkhäuser Boston. Statistical models [F91], [L00], [MRS90], [To93] are used to describe electron transport in semiconductors at a mesoscopic level. The basic model is given by the Boltzmann transport equation (BTE) for semiconductors in the semiclassical approximation: (Formula Presented.) where f represents the electron probability density function (pdf) in phase space k at the physical location x and time t. ħ and e are physical constants; the Planck constant divided by 2π and the positive electric charge, respectively. The energy-band function ε is given by the Kane non-parabolic band model, which is a non-negative continuous function of the form (Formula Presented.) where m* is the effective mass and α is the non-parabolicity factor. In this way we observe that setting α = 0 in Equation (7.1.2) the model is reduced to the widely used parabolic approximation.
AB - © 2007, Birkhäuser Boston. Statistical models [F91], [L00], [MRS90], [To93] are used to describe electron transport in semiconductors at a mesoscopic level. The basic model is given by the Boltzmann transport equation (BTE) for semiconductors in the semiclassical approximation: (Formula Presented.) where f represents the electron probability density function (pdf) in phase space k at the physical location x and time t. ħ and e are physical constants; the Planck constant divided by 2π and the positive electric charge, respectively. The energy-band function ε is given by the Kane non-parabolic band model, which is a non-negative continuous function of the form (Formula Presented.) where m* is the effective mass and α is the non-parabolicity factor. In this way we observe that setting α = 0 in Equation (7.1.2) the model is reduced to the widely used parabolic approximation.
KW - Boltzmann transport equation (BTE)
KW - Weighted essentially non-oscillatory (WENO) schemes
KW - direct simulation Monte Carlo (DSMC)
KW - metal oxide semiconductor field effect transistor (MOSFET)
KW - metal semiconductor field effect transistor (MESFET)
KW - semiconductor device simulation
UR - https://www.scopus.com/pages/publications/84922642986
U2 - 10.1007/978-0-8176-4554-0_7
DO - 10.1007/978-0-8176-4554-0_7
M3 - Chapter
SN - 2164-3679
SP - 151
EP - 171
BT - Modeling and Simulation in Science, Engineering and Technology
ER -