Detection and fitting of the soft breakdown failure mode in MOS structures

    Sortida de recercaRecercarevisió per companys

    21 Cites (Scopus)

    Resum

    Despite the numerous publications dealing with the soft breakdown (SBD) failure mode in ultrathin gate oxides, there is still a large disagreement on the actual functional form of the associated current-voltage (I-V) characteristic. Here, we show that a power law, for applied voltages less than approximately 3.5 V, and an exponential law for higher voltages form suitable fitting models. The discrepancy has its origin in the fact that the SBD experimental detection window is variable, since it is determined not only by the geometrical parameters of the device under test, which set the fresh I-V characteristic of the sample, but also by the strength of the breakdown event. In addition, we analyze the scatter of the SBD I-V curves as a function of the stress current.
    Idioma originalEnglish
    Pàgines (de-a)1801-1805
    RevistaSolid-State Electronics
    Volum43
    DOIs
    Estat de la publicacióPublicada - 1 de gen. 1999

    Empremta digital Navegar pels temes de recerca de 'Detection and fitting of the soft breakdown failure mode in MOS structures'. Junts formen una empremta única.

    Citeu això