Damage reduction in channeled ion implanted 6H-SiC

E. Morvan; N. Mestres; F.J. Campos; J. Pascual; A. Hállen; M. Linnarsson; A.Y. Kutznetsov

Damage reduction in channeled ion implanted 6H-SiC

E. Morvan, N. Mestres, F.J. Campos, J. Pascual, A. Hállen, M. Linnarsson, A.Y. Kutznetsov

Departament de Física

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Resum

We compare damage effects of `random' (off-axis) and 〈0001〉 aligned implants of 1.5 MeV Al into 6H-SiC. Both channeled and random equivalent SIMS profiles have been used to adjust model parameters of the simulator. Depth resolved Raman measurements show that at ion doses below approximately 5×1014cm-2, the integral damage is reduced by a factor of approximately 2.5 for the channeled implant. This confirms the corresponding reduction of defect concentrations predicted by simulations.

Idioma original	Anglès
Pàgines (de-a)	893-896
Revista	Materials Science Forum
Volum	338
Número	3
Estat de la publicació	Publicada - 1 de gen. 2000

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https://www.scopus.com/pages/publications/17544403487

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title = "Damage reduction in channeled ion implanted 6H-SiC",

abstract = "We compare damage effects of `random' (off-axis) and 〈0001〉 aligned implants of 1.5 MeV Al into 6H-SiC. Both channeled and random equivalent SIMS profiles have been used to adjust model parameters of the simulator. Depth resolved Raman measurements show that at ion doses below approximately 5×1014cm-2, the integral damage is reduced by a factor of approximately 2.5 for the channeled implant. This confirms the corresponding reduction of defect concentrations predicted by simulations.",

author = "E. Morvan and N. Mestres and F.J. Campos and J. Pascual and A. H{\'a}llen and M. Linnarsson and A.Y. Kutznetsov",

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month = jan,

day = "1",

language = "English",

volume = "338",

pages = "893--896",

journal = "Materials Science Forum",

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TY - JOUR

T1 - Damage reduction in channeled ion implanted 6H-SiC

AU - Morvan, E.

AU - Mestres, N.

AU - Campos, F.J.

AU - Pascual, J.

AU - Hállen, A.

AU - Linnarsson, M.

AU - Kutznetsov, A.Y.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - We compare damage effects of `random' (off-axis) and 〈0001〉 aligned implants of 1.5 MeV Al into 6H-SiC. Both channeled and random equivalent SIMS profiles have been used to adjust model parameters of the simulator. Depth resolved Raman measurements show that at ion doses below approximately 5×1014cm-2, the integral damage is reduced by a factor of approximately 2.5 for the channeled implant. This confirms the corresponding reduction of defect concentrations predicted by simulations.

AB - We compare damage effects of `random' (off-axis) and 〈0001〉 aligned implants of 1.5 MeV Al into 6H-SiC. Both channeled and random equivalent SIMS profiles have been used to adjust model parameters of the simulator. Depth resolved Raman measurements show that at ion doses below approximately 5×1014cm-2, the integral damage is reduced by a factor of approximately 2.5 for the channeled implant. This confirms the corresponding reduction of defect concentrations predicted by simulations.

UR - https://www.scopus.com/pages/publications/17544403487

M3 - Article

SN - 0255-5476

VL - 338

SP - 893

EP - 896

JO - Materials Science Forum

JF - Materials Science Forum

IS - 3

ER -

Damage reduction in channeled ion implanted 6H-SiC

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