Resum
We compare damage effects of `random' (off-axis) and 〈0001〉 aligned implants of 1.5 MeV Al into 6H-SiC. Both channeled and random equivalent SIMS profiles have been used to adjust model parameters of the simulator. Depth resolved Raman measurements show that at ion doses below approximately 5×1014cm-2, the integral damage is reduced by a factor of approximately 2.5 for the channeled implant. This confirms the corresponding reduction of defect concentrations predicted by simulations.
Idioma original | Anglès |
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Pàgines (de-a) | 893-896 |
Revista | Materials Science Forum |
Volum | 338 |
Número | 3 |
Estat de la publicació | Publicada - 1 de gen. 2000 |