Damage reduction in channeled ion implanted 6H-SiC

E. Morvan, N. Mestres, F.J. Campos, J. Pascual, A. Hállen, M. Linnarsson, A.Y. Kutznetsov

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Resum

We compare damage effects of `random' (off-axis) and 〈0001〉 aligned implants of 1.5 MeV Al into 6H-SiC. Both channeled and random equivalent SIMS profiles have been used to adjust model parameters of the simulator. Depth resolved Raman measurements show that at ion doses below approximately 5×1014cm-2, the integral damage is reduced by a factor of approximately 2.5 for the channeled implant. This confirms the corresponding reduction of defect concentrations predicted by simulations.
Idioma originalAnglès
Pàgines (de-a)893-896
RevistaMaterials Science Forum
Volum338
Número3
Estat de la publicacióPublicada - 1 de gen. 2000

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