TY - BOOK
T1 - Contact resistance extraction methods for CNTFETs
AU - Pacheco-Sanchez, Anibal
AU - Mothes, Sven
AU - Claus, Martin
AU - SchrOter, Michael
PY - 2015/9/14
Y1 - 2015/9/14
N2 - Three different methods for the extraction of the contact resistance based on both the well-known transfer length method (TLM) and two variants of the Y-function method have been applied to simulation and experimental data of CNTFETs and the results have been compared. While for TLM special CNT test structures are mandatory, standard electrical device characteristics are sufficient for the Y-function methods. The methods have been applied to CNTFETs with low and high channel resistance. It turned out that the standard Y-function method fails to deliver the correct contact resistance in case of a relatively high channel resistance compared to the contact resistances. A physical validation is also given for the application of these methods based on traditional Si MOSFET theory to quasi-ballistic CNTFETs.
AB - Three different methods for the extraction of the contact resistance based on both the well-known transfer length method (TLM) and two variants of the Y-function method have been applied to simulation and experimental data of CNTFETs and the results have been compared. While for TLM special CNT test structures are mandatory, standard electrical device characteristics are sufficient for the Y-function methods. The methods have been applied to CNTFETs with low and high channel resistance. It turned out that the standard Y-function method fails to deliver the correct contact resistance in case of a relatively high channel resistance compared to the contact resistances. A physical validation is also given for the application of these methods based on traditional Si MOSFET theory to quasi-ballistic CNTFETs.
U2 - 10.1109/essderc.2015.7324773
DO - 10.1109/essderc.2015.7324773
M3 - Proceeding
T3 - 2015 45th European Solid State Device Research Conference (ESSDERC)
BT - Contact resistance extraction methods for CNTFETs
ER -