Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2 Gate Oxide on MOS Structures

X. Blasco, M. Nafría, X. Aymerich

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Idioma original	Anglès
Pàgines (de-a)	1513-1516
Revista	Microelectronics and Reliability
Volum	42
Estat de la publicació	Publicada - 1 de gen. 2002

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title = "Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2 Gate Oxide on MOS Structures",

author = "X. Blasco and M. Nafr{\'i}a and X. Aymerich",

year = "2002",

month = jan,

day = "1",

language = "English",

volume = "42",

pages = "1513--1516",

journal = "Microelectronics and Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2 Gate Oxide on MOS Structures

AU - Blasco, X.

AU - Nafría, M.

AU - Aymerich, X.

PY - 2002/1/1

Y1 - 2002/1/1

UR - https://www.scopus.com/pages/publications/80054954105

M3 - Article

SN - 0026-2714

VL - 42

SP - 1513

EP - 1516

JO - Microelectronics and Reliability

JF - Microelectronics and Reliability

ER -