Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2 Gate Oxide on MOS Structures

X. Blasco, M. Nafría, X. Aymerich

Producció científica: Contribució a revista › Article › Recerca

Idioma original	Anglès
Pàgines (de-a)	1513-1516
Revista	Microelectronics and Reliability
Volum	42
Estat de la publicació	Publicada - 1 de gen. 2002

Com citar-ho

@article{5d1c464b1be349e388a2c1b44e1fabdd,

title = "Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2 Gate Oxide on MOS Structures",

author = "X. Blasco and M. Nafr{\'i}a and X. Aymerich",

year = "2002",

month = jan,

day = "1",

language = "English",

volume = "42",

pages = "1513--1516",

journal = "Microelectronics and Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

}