Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements

C. Couso; V. Iglesias; M. Porti; S. Claramunt; M. Nafría; N. Domingo; A. Cordes; G. Bersuker

doi:10.1109/LED.2016.2537051

Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements

C. Couso, V. Iglesias, M. Porti, S. Claramunt, M. Nafría, N. Domingo, A. Cordes, G. Bersuker

Departament d'Enginyeria Electrònica

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11 Cites (Scopus)

Resum

© 1980-2012 IEEE. The stacks of III-V materials, grown on the Si substrate, that are considered for the fabrication of highly scaled devices tend to develop structural defects, in particular threading dislocations (TDs), which affect device electrical properties. We demonstrate that the characteristics of the TD sites can be analyzed by using the conductive atomic force microscopy technique with nanoscale spatial resolution within a wide temperature range. In the studied InGaAs/Si stacks, electrical conductance through the TD sites was found to be governed by the Poole-Frenkel emission, while the off-TDs conductivity is dominated by the thermionic emission process.

Idioma original	Anglès
Número d’article	7422696
Pàgines (de-a)	640-643
Revista	IEEE Electron Device Letters
Volum	37
DOIs	https://doi.org/10.1109/LED.2016.2537051
Estat de la publicació	Publicada - 1 de maig 2016

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10.1109/LED.2016.2537051

https://ddd.uab.cat/record/163088

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title = "Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements",

abstract = "{\textcopyright} 1980-2012 IEEE. The stacks of III-V materials, grown on the Si substrate, that are considered for the fabrication of highly scaled devices tend to develop structural defects, in particular threading dislocations (TDs), which affect device electrical properties. We demonstrate that the characteristics of the TD sites can be analyzed by using the conductive atomic force microscopy technique with nanoscale spatial resolution within a wide temperature range. In the studied InGaAs/Si stacks, electrical conductance through the TD sites was found to be governed by the Poole-Frenkel emission, while the off-TDs conductivity is dominated by the thermionic emission process.",

keywords = "CAFM, Poole Frenkel emission, semiconductor defects, thermionic emission, threading dislocation",

author = "C. Couso and V. Iglesias and M. Porti and S. Claramunt and M. Nafr{\'i}a and N. Domingo and A. Cordes and G. Bersuker",

year = "2016",

month = may,

day = "1",

doi = "10.1109/LED.2016.2537051",

language = "English",

volume = "37",

pages = "640--643",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements

AU - Couso, C.

AU - Iglesias, V.

AU - Porti, M.

AU - Claramunt, S.

AU - Nafría, M.

AU - Domingo, N.

AU - Cordes, A.

AU - Bersuker, G.

PY - 2016/5/1

Y1 - 2016/5/1

N2 - © 1980-2012 IEEE. The stacks of III-V materials, grown on the Si substrate, that are considered for the fabrication of highly scaled devices tend to develop structural defects, in particular threading dislocations (TDs), which affect device electrical properties. We demonstrate that the characteristics of the TD sites can be analyzed by using the conductive atomic force microscopy technique with nanoscale spatial resolution within a wide temperature range. In the studied InGaAs/Si stacks, electrical conductance through the TD sites was found to be governed by the Poole-Frenkel emission, while the off-TDs conductivity is dominated by the thermionic emission process.

AB - © 1980-2012 IEEE. The stacks of III-V materials, grown on the Si substrate, that are considered for the fabrication of highly scaled devices tend to develop structural defects, in particular threading dislocations (TDs), which affect device electrical properties. We demonstrate that the characteristics of the TD sites can be analyzed by using the conductive atomic force microscopy technique with nanoscale spatial resolution within a wide temperature range. In the studied InGaAs/Si stacks, electrical conductance through the TD sites was found to be governed by the Poole-Frenkel emission, while the off-TDs conductivity is dominated by the thermionic emission process.

KW - CAFM

KW - Poole Frenkel emission

KW - semiconductor defects

KW - thermionic emission

KW - threading dislocation

U2 - 10.1109/LED.2016.2537051

DO - 10.1109/LED.2016.2537051

M3 - Article

SN - 0741-3106

VL - 37

SP - 640

EP - 643

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

M1 - 7422696

ER -

Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements

Resum

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