Competing degradation mechanisms in short-channel transistors under channel hot-carrier stress at elevated temperatures

Esteve Amat, Thomas Kauerauf, Robin Degraeve, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Guido Groeseneken

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Resum

The temperature dependence of channel hot-carrier (CHC) degradation in n-MOS transistors with high- $k$ dielectrics has been studied. The analysis starts from the most damaging CHC stress conditions at room temperature ($V-{G} = V-{D}/\hbox{2}$ for long channels and $V-{G} = V-{D}$ for short channels). We find that, for long-channel transistors, the CHC degradation decreases at high temperature, while for short-channel transistors, an increase is observed. In this paper, a new picture to explain the observed increment of CHC damage with temperature for short-channel transistors with high-$k$ dielectric is presented. We demonstrate that the total CHC degradation consists of two components: the classical CHC damage located at the drain side and the degradation produced by the voltage drop over the gate dielectric, which can be considered a positive bias temperature instability (PBTI) effect. Particularly for short transistors stressed at high temperatures, this PBTI component dominates the total CHC degradation. © 2006 IEEE.
Idioma originalEnglish
Número d’article5075549
Pàgines (de-a)454-458
RevistaIEEE Transactions on Device and Materials Reliability
Volum9
DOIs
Estat de la publicacióPublicada - 1 de set. 2009

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