Compact model of the nanoscale gate all-around MOSFET

David Jimenez Jimenez; J.J. Sáenz; B. Iñíguez; J. Suñé; L.F. Marsal; J. Pallarès

Compact model of the nanoscale gate all-around MOSFET

David Jimenez Jimenez, J.J. Sáenz, B. Iñíguez, J. Suñé, L.F. Marsal, J. Pallarès

Departament d'Enginyeria Electrònica

Producció científica: Capítol de llibre › Capítol › Recerca

Idioma original	Anglès
Títol de la publicació	Science and Technology of Semiconductor-On-Insulator structures and devices operating in a harsh environment. NATO Science Series II: Mathematics, Physics and Chemistry
Lloc de publicació	Boston (US)
Pàgines	321-323
Nombre de pàgines	2
Volum	185
Edició	1
Estat de la publicació	Publicada - 1 de gen. 2004

Sèrie de publicacions

Nom	NATO science series. Series II, Mathematics, physics, and chemistry

Com citar-ho

Jimenez Jimenez, D., Sáenz, J. J., Iñíguez, B., Suñé, J., Marsal, L. F., & Pallarès, J. (2004). Compact model of the nanoscale gate all-around MOSFET. In Science and Technology of Semiconductor-On-Insulator structures and devices operating in a harsh environment. NATO Science Series II: Mathematics, Physics and Chemistry (1 ed., Vol. 185, pàg. 321-323). (NATO science series. Series II, Mathematics, physics, and chemistry)..

Jimenez Jimenez, David ; Sáenz, J.J. ; Iñíguez, B. et al. / Compact model of the nanoscale gate all-around MOSFET. Science and Technology of Semiconductor-On-Insulator structures and devices operating in a harsh environment. NATO Science Series II: Mathematics, Physics and Chemistry. Vol. 185 1. ed. Boston (US), 2004. pàg. 321-323 (NATO science series. Series II, Mathematics, physics, and chemistry).

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year = "2004",

month = jan,

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Jimenez Jimenez, D, Sáenz, JJ, Iñíguez, B, Suñé, J, Marsal, LF & Pallarès, J 2004, Compact model of the nanoscale gate all-around MOSFET. in Science and Technology of Semiconductor-On-Insulator structures and devices operating in a harsh environment. NATO Science Series II: Mathematics, Physics and Chemistry. 1 ed., vol. 185, NATO science series. Series II, Mathematics, physics, and chemistry, Boston (US), pàg. 321-323.

Compact model of the nanoscale gate all-around MOSFET. / Jimenez Jimenez, David; Sáenz, J.J.; Iñíguez, B. et al.
Science and Technology of Semiconductor-On-Insulator structures and devices operating in a harsh environment. NATO Science Series II: Mathematics, Physics and Chemistry. Vol. 185 1. ed. Boston (US), 2004. pàg. 321-323 (NATO science series. Series II, Mathematics, physics, and chemistry).

Producció científica: Capítol de llibre › Capítol › Recerca

TY - CHAP

T1 - Compact model of the nanoscale gate all-around MOSFET

AU - Jimenez Jimenez, David

AU - Sáenz, J.J.

AU - Iñíguez, B.

AU - Suñé, J.

AU - Marsal, L.F.

AU - Pallarès, J.

PY - 2004/1/1

Y1 - 2004/1/1

M3 - Chapter

SN - 1-4020-3012-6

VL - 185

T3 - NATO science series. Series II, Mathematics, physics, and chemistry

SP - 321

EP - 323

BT - Science and Technology of Semiconductor-On-Insulator structures and devices operating in a harsh environment. NATO Science Series II: Mathematics, Physics and Chemistry

CY - Boston (US)

ER -

Jimenez Jimenez D, Sáenz JJ, Iñíguez B, Suñé J, Marsal LF, Pallarès J. Compact model of the nanoscale gate all-around MOSFET. In Science and Technology of Semiconductor-On-Insulator structures and devices operating in a harsh environment. NATO Science Series II: Mathematics, Physics and Chemistry. 1 ed. Vol. 185. Boston (US). 2004. pàg. 321-323. (NATO science series. Series II, Mathematics, physics, and chemistry).