Combined nanoscale KPFM characterization and device simulation for the evaluation of the MOSFET variability related to metal gate workfunction fluctuations

Producció científica: Contribució a revistaArticleRecercaAvaluat per experts

1 Descàrregues (Pure)

Resum

In this work, a more realistic approximation based on 2D nanoscale experimental data obtained on a metal layer is presented to investigate the impact of the metal gate polycrystallinity on the MOSFET variability. The nanoscale data (obtained with a Kelvin Probe Force Microscope, KPFM) were introduced in a device simulator to analyze the effect of a TiN metal gate work functions (WF) fluctuations on the MOSFET electrical characteristics. The results demonstrate that the device characteristics are affected not only by the WF fluctuations, but also their spatial distribution, which is specially relevant in very small devices. The effect on these characteristics of the spatial distribution on the gate area of such fluctuations is also evaluated.

Idioma originalAnglès
Número d’article111048
Nombre de pàgines4
RevistaMicroelectronic Engineering
Volum216
Estat de la publicacióPublicada - 15 d’ag. 2019

Fingerprint

Navegar pels temes de recerca de 'Combined nanoscale KPFM characterization and device simulation for the evaluation of the MOSFET variability related to metal gate workfunction fluctuations'. Junts formen un fingerprint únic.

Com citar-ho