@book{0ab2b54fd6674acd98a1037ab0c27e78,
title = "Combined effects of BTI, HCI and OFF-State MOSFETs Aging on the CMOS Inverter Performance",
abstract = "In this work, the degradation of the transistors in a CMOS inverter under the various biasing configurations in a complete operation cycle and their impact on the circuit performance are experimentally studied. The relationships between transistors parameters (threshold voltage and mobility) and circuit specifications shifts (peak current and inversion voltage) are explained in terms of the different device aging mechanisms that are active depending on the voltages at the circuit terminals. Moreover, the combined effects of the different aging mechanisms sequentially activated (such as BTI, HCI and OFF-state), at device and circuit levels, emphasizing the role of the OFF-state degradation, are also discussed.",
keywords = "Aging, BTI, CMOS inverter, degradation, Hot-Carrier Injection, Off-state stress",
author = "A. Crespo-Yepes and C. Nasarre and N. Garsot and J. Martin-Martinez and R. Rodriguez and E. Barajas and X. Aragones and D. Mateo and M. Nafria",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.",
year = "2021",
month = sep,
day = "1",
doi = "10.1109/EuroSOI-ULIS53016.2021.9560699",
language = "English",
series = "2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",
}