Resum
A new platform for the fabrication of crystalline micro- and nano-electromechanical systems fully integrable with CMOS is presented. A pre-CMOS process on SOI wafers allows bulk silicon areas for standard CMOS processing and areas with a stack layer of silicon and silicon oxide to be obtained, in which a set of microelectromechanical devices can be fabricated. An integrated resonant beam system with electrical actuation and detection fabricated according to the presented approach is provided.
| Idioma original | Anglès |
|---|---|
| Pàgines (de-a) | 800-801 |
| Nombre de pàgines | 2 |
| Revista | Electronics Letters |
| Volum | 42 |
| Número | 14 |
| DOIs | |
| Estat de la publicació | Publicada - 6 de jul. 2006 |