Circuit design-oriented stochastic piecewise modeling of the postbreakdown gate current in MOSFETs: Application to ring oscillators

Javier Martin-Martinez, Ben Kaczer, Robin Degraeve, Philippe J. Roussel, Rosana Rodriguez, Montserrat Nafria, Xavier Aymerich, B. Dierickx, Guido Groeseneken

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Resum

A methodology to incorporate the MOSFET gate dielectric breakdown (BD) failure mechanism in the design of complex systems is presented. The model accounts for the statistical nature of the BD phenomenon, is easily extensible to different device geometries and operation conditions (following the established scaling rules for the mechanism), considers the stress history, and can be easily implemented in circuit simulation tools. Device level characterization of the BD mechanism is presented, which is the base for model parameter extraction. The model has been introduced in a circuit simulator to show its suitability for evaluation of the BD effect in circuits and their reliability, taking ring oscillators as example. © 2011 IEEE.
Idioma originalEnglish
Número d’article5955107
Pàgines (de-a)78-85
RevistaIEEE Transactions on Device and Materials Reliability
Volum12
Número1
DOIs
Estat de la publicacióPublicada - 1 de març 2012

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