Characterization of the Electrical Damage due to Polysilicon RIE(SF<inf>6</inf>+ CL<inf>2</inf>Plasma) Etching

E. Castán; A. De Dios; L. Bailón; J. Barbolla; E. Cabruja; C. Domínquez; E. Lora-Tamayo

doi:10.1149/1.2069168

Characterization of the Electrical Damage due to Polysilicon RIE(SF<inf>6</inf>+ CL<inf>2</inf>Plasma) Etching

E. Castán, A. De Dios, L. Bailón, J. Barbolla, E. Cabruja, C. Domínquez, E. Lora-Tamayo

Departament de Física

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The electrically active damage generated by a polysilicon RIE (SF6+ Cl2plasma) etching process has been characterized in polysilicon deposited on a 500 Å thick gate oxide by the C-V and DLTS techniques. The study was carried out by measuring the charge density in the oxide and the interface state density in metal oxide semiconductor capacitors for extreme values of the controllable RIE parameters. From the results obtained we conclude that this system does not generate any appreciable damage. © 1991, The Electrochemical Society, Inc. All rights reserved.

Idioma original	Anglès
Pàgines (de-a)	193-195
Revista	Journal of the Electrochemical Society
Volum	139
Número	1
DOIs	https://doi.org/10.1149/1.2069168
Estat de la publicació	Publicada - 1 de gen. 1992

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@article{0383d554efc049f49d535c3744880f8e,

title = "Characterization of the Electrical Damage due to Polysilicon RIE(SF6+ CL2Plasma) Etching",

abstract = "The electrically active damage generated by a polysilicon RIE (SF6+ Cl2plasma) etching process has been characterized in polysilicon deposited on a 500 {\AA} thick gate oxide by the C-V and DLTS techniques. The study was carried out by measuring the charge density in the oxide and the interface state density in metal oxide semiconductor capacitors for extreme values of the controllable RIE parameters. From the results obtained we conclude that this system does not generate any appreciable damage. {\textcopyright} 1991, The Electrochemical Society, Inc. All rights reserved.",

author = "E. Cast{\'a}n and \{De Dios\}, A. and L. Bail{\'o}n and J. Barbolla and E. Cabruja and C. Dom{\'i}nquez and E. Lora-Tamayo",

year = "1992",

month = jan,

day = "1",

doi = "10.1149/1.2069168",

language = "English",

volume = "139",

pages = "193--195",

journal = "Journal of the Electrochemical Society",

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publisher = "Institute of Physics",

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TY - JOUR

T1 - Characterization of the Electrical Damage due to Polysilicon RIE(SF6+ CL2Plasma) Etching

AU - Castán, E.

AU - De Dios, A.

AU - Bailón, L.

AU - Barbolla, J.

AU - Cabruja, E.

AU - Domínquez, C.

AU - Lora-Tamayo, E.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - The electrically active damage generated by a polysilicon RIE (SF6+ Cl2plasma) etching process has been characterized in polysilicon deposited on a 500 Å thick gate oxide by the C-V and DLTS techniques. The study was carried out by measuring the charge density in the oxide and the interface state density in metal oxide semiconductor capacitors for extreme values of the controllable RIE parameters. From the results obtained we conclude that this system does not generate any appreciable damage. © 1991, The Electrochemical Society, Inc. All rights reserved.

AB - The electrically active damage generated by a polysilicon RIE (SF6+ Cl2plasma) etching process has been characterized in polysilicon deposited on a 500 Å thick gate oxide by the C-V and DLTS techniques. The study was carried out by measuring the charge density in the oxide and the interface state density in metal oxide semiconductor capacitors for extreme values of the controllable RIE parameters. From the results obtained we conclude that this system does not generate any appreciable damage. © 1991, The Electrochemical Society, Inc. All rights reserved.

UR - https://www.scopus.com/pages/publications/0026638499

U2 - 10.1149/1.2069168

DO - 10.1149/1.2069168

M3 - Article

SN - 0013-4651

VL - 139

SP - 193

EP - 195

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 1

ER -

Characterization of the Electrical Damage due to Polysilicon RIE(SF<inf>6</inf>+ CL<inf>2</inf>Plasma) Etching

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