Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique

S. Dueñas, E. Castán, L. Enriquez, J. Barbolla, J. Montserrat, LORA-TAMAYO E.

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Idioma original	Anglès
Pàgines (de-a)	1637-1648
Revista	Semiconductor science and technology
Volum	9
Estat de la publicació	Publicada - 1 de gen. 1994

Altres arxius i enllaços

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title = "Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique",

author = "S. Due{\~n}as and E. Cast{\'a}n and L. Enriquez and J. Barbolla and J. Montserrat and LORA-TAMAYO E.",

year = "1994",

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T1 - Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique

AU - Dueñas, S.

AU - Castán, E.

AU - Enriquez, L.

AU - Barbolla, J.

AU - Montserrat, J.

AU - E., LORA-TAMAYO

PY - 1994/1/1

Y1 - 1994/1/1

UR - https://www.scopus.com/pages/publications/0028498001

M3 - Article

SN - 0268-1242

VL - 9

SP - 1637

EP - 1648

JO - Semiconductor science and technology

JF - Semiconductor science and technology

ER -