Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique

S. Dueñas, E. Castán, L. Enriquez, J. Barbolla, J. Montserrat, LORA-TAMAYO E.

Producció científica: Contribució a revista › Article › Recerca

Idioma original	Anglès
Pàgines (de-a)	1637-1648
Revista	Semiconductor science and technology
Volum	9
Estat de la publicació	Publicada - 1 de gen. 1994

Com citar-ho

@article{cb2da208bc6f47c895c30f6b101acae9,

title = "Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique",

author = "S. Due{\~n}as and E. Cast{\'a}n and L. Enriquez and J. Barbolla and J. Montserrat and LORA-TAMAYO E.",

year = "1994",

month = jan,

day = "1",

language = "English",

volume = "9",

pages = "1637--1648",

journal = "Semiconductor science and technology",

issn = "0268-1242",

}

TY - JOUR

T1 - Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique

AU - Dueñas, S.

AU - Castán, E.

AU - Enriquez, L.

AU - Barbolla, J.

AU - Montserrat, J.

AU - E., LORA-TAMAYO

PY - 1994/1/1

Y1 - 1994/1/1

M3 - Article

SN - 0268-1242

VL - 9

SP - 1637

EP - 1648

JO - Semiconductor science and technology

JF - Semiconductor science and technology

ER -