Characterization of nonvolatile switches based on 2-D multilayered hBN memristors for high-frequency applications

Keyphrases

• Silica 100%
• Memristor 100%
• High-frequency Applications 100%
• Hexagonal Boron Nitride (h-BN) 100%
• Non-volatile Switching 100%
• Off-state 100%
• CVD Diamond 100%
• Energy Consumption 50%
• MEMS-based 50%
• Microwave Systems 50%
• Insertion Loss 50%
• Switching Time 50%
• 2D Materials 50%
• Capacitance 50%
• Electrical Performance 50%
• Multilayered Structure 50%
• On-state Resistance 50%
• Nitrided Layer 50%
• Number of Elements 50%
• Equivalent Electrical Circuit 50%
• Switching Element 50%
• High-resistivity Silicon (HR-Si) 50%
• Power Handling Capability 50%
• Small Footprint 50%

Engineering

• Nitride 100%
• Diamond 100%
• Chemical Vapor Deposition 100%
• Silicon Dioxide 100%
• Memristor 100%
• Switching Time 50%
• Electrical Performance 50%
• Microelectromechanical System 50%
• Nitride Layer 50%
• Insertion Loss 50%
• Switching Circuit 50%

Material Science

• Chemical Vapor Deposition 100%
• Boron Nitride 100%
• Diamond 100%
• Capacitance 50%
• Electrical Resistivity 50%
• Silicon 50%
• Microelectromechanical System 50%