Characterization of interface states in thin films of thermally grown SiO<inf>2</inf>

Keyphrases

• Silica 100%
• Interface States 100%
• Conduction Mechanism 100%
• Trap States 100%
• Oxides 50%
• Oxide Thickness 50%
• Tunneling 50%
• Thin Oxides 50%
• Surface Oxidation 50%
• Barrier Height 50%
• Temperature Sensitivity 50%
• Current Temperature 50%
• Epitaxial Layers 50%
• Trap Density 50%
• Trap-assisted 50%
• Interface State Density 50%
• Tunneling Conduction 50%
• Thermal Evaporation 50%
• Trap-assisted Tunneling 50%
• Reverse Saturation Current 50%
• Dry Oxygen 50%

Engineering

• Tunnel Construction 100%
• Thin Films 100%
• Interface State 100%
• Silicon Dioxide 100%
• Barrier Height 33%
• Oxide Layer 33%
• Oxide Thickness 33%
• Epitaxial Film 33%

Material Science

• Oxide Compound 100%
• Thin Films 100%
• Density 66%
• Surface (Surface Science) 33%
• Aluminum 33%
• Epitaxial Film 33%