Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source/Drain

E. Amat; R. Rodríguez; M. B. González; J. Martín-Martínez; M. Nafría; X. Aymerich; V. Machkaoutsan; M. Bauer; P. Verheyen; E. Simoen

doi:10.1109/ICSICT.2010.5667396

Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source/Drain

E. Amat^*, R. Rodríguez, M. B. González, J. Martín-Martínez, M. Nafría, X. Aymerich, V. Machkaoutsan, M. Bauer, P. Verheyen, E. Simoen

^*Autor corresponent d’aquest treball

Departament d'Enginyeria Electrònica

Producció científica: LLibre/informe › Llibre d'Actes › Recerca › Avaluat per experts

7 Cites (Scopus)

Resum

Channel Hot Carrier (CHC) degradation on uniaxially strained pMOS and nMOS samples with different S/D materials has been analyzed. The results show that the CHC damage is larger in the strained samples in comparison with the unstrained devices, and increases with the temperature.

Idioma original	Anglès
Nombre de pàgines	3
DOIs	https://doi.org/10.1109/ICSICT.2010.5667396
Estat de la publicació	Publicada - 13 de des. 2010

Sèrie de publicacions

Nom	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Accés al document

10.1109/ICSICT.2010.5667396

Com citar-ho

Amat, E., Rodríguez, R., González, M. B., Martín-Martínez, J., Nafría, M., Aymerich, X., Machkaoutsan, V., Bauer, M., Verheyen, P., & Simoen, E. (2010). Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source/Drain. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667396

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title = "Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source/Drain",

abstract = "Channel Hot Carrier (CHC) degradation on uniaxially strained pMOS and nMOS samples with different S/D materials has been analyzed. The results show that the CHC damage is larger in the strained samples in comparison with the unstrained devices, and increases with the temperature.",

author = "E. Amat and R. Rodr{\'i}guez and Gonz{\'a}lez, \{M. B.\} and J. Mart{\'i}n-Mart{\'i}nez and M. Nafr{\'i}a and X. Aymerich and V. Machkaoutsan and M. Bauer and P. Verheyen and E. Simoen",

year = "2010",

month = dec,

day = "13",

doi = "10.1109/ICSICT.2010.5667396",

language = "English",

isbn = "9781424457984",

series = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

}

Amat, E , Rodríguez, R, González, MB, Martín-Martínez, J , Nafría, M, Aymerich, X, Machkaoutsan, V, Bauer, M, Verheyen, P & Simoen, E 2010, Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source/Drain. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. https://doi.org/10.1109/ICSICT.2010.5667396

TY - BOOK

T1 - Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source/Drain

AU - Amat, E.

AU - Rodríguez, R.

AU - González, M. B.

AU - Martín-Martínez, J.

AU - Nafría, M.

AU - Aymerich, X.

AU - Machkaoutsan, V.

AU - Bauer, M.

AU - Verheyen, P.

AU - Simoen, E.

PY - 2010/12/13

Y1 - 2010/12/13

N2 - Channel Hot Carrier (CHC) degradation on uniaxially strained pMOS and nMOS samples with different S/D materials has been analyzed. The results show that the CHC damage is larger in the strained samples in comparison with the unstrained devices, and increases with the temperature.

AB - Channel Hot Carrier (CHC) degradation on uniaxially strained pMOS and nMOS samples with different S/D materials has been analyzed. The results show that the CHC damage is larger in the strained samples in comparison with the unstrained devices, and increases with the temperature.

U2 - 10.1109/ICSICT.2010.5667396

DO - 10.1109/ICSICT.2010.5667396

M3 - Proceeding

AN - SCOPUS:78751522916

SN - 9781424457984

T3 - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

BT - Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source/Drain

ER -

Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source/Drain

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