Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack

E. Amat, T. Kauerauf, R. Degraeve, R. Rodríguez, M. Nafría, X. Aymerich, G. Groeseneken

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Resum

A comparison between pMOS and nMOS short channel transistors with high-k dielectric subjected to channel hot-carrier (CHC) stress is presented. Smaller CHC degradation is observed in pMOS devices. At high temperature, the CHC degradation increases for pMOS and nMOS. The temperature dependence of the CHC degradation has been explained, for both transistor types, by considering a larger influence of a bias temperature instability (BTI)-related component of the total CHC induced degradation. © 2009 Elsevier B.V.
Idioma originalEnglish
Pàgines (de-a)47-50
RevistaMicroelectronic Engineering
Volum87
DOIs
Estat de la publicacióPublicada - 1 de gen. 2010

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