Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced-CAFM,

X. Blasco, M. Nafría, X. Aymerich, J. Pétry, W. Vandervorst

Producció científica: Contribució a revista › Article › Recerca

13 Cites (Scopus)

Idioma original	Anglès
Pàgines (de-a)	811-814
Revista	Microelectronics and Reliability
Volum	45
Número	5-6
DOIs	https://doi.org/10.1016/j.microrel.2004.11.042
Estat de la publicació	Publicada - 1 de gen. 2005

Accés al document

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title = "Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced-CAFM,",

author = "X. Blasco and M. Nafr{\'i}a and X. Aymerich and J. P{\'e}try and W. Vandervorst",

year = "2005",

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T1 - Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced-CAFM,

AU - Blasco, X.

AU - Nafría, M.

AU - Aymerich, X.

AU - Pétry, J.

AU - Vandervorst, W.

PY - 2005/1/1

Y1 - 2005/1/1

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DO - 10.1016/j.microrel.2004.11.042

M3 - Article

SN - 0026-2714

VL - 45

SP - 811

EP - 814

JO - Microelectronics and Reliability

JF - Microelectronics and Reliability

IS - 5-6

ER -