Breakdown modes and breakdown statistics of SiO2 gate oxides

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Idioma original	Anglès
Pàgines (de-a)	789-848
Revista	International Journal of High Speed Electronics and Systems
Volum	11
Número	3
DOIs	https://doi.org/10.1016/S0129-1564(01)00100-3
Estat de la publicació	Publicada - 1 de gen. 2001

Accés al document

@article{caaa34a44695491f92d863d7d5415702,

title = "Breakdown modes and breakdown statistics of SiO2 gate oxides",

author = "J Su{\~n}{\'e} and D Jim{\'e}nez and Miranda and E.",

year = "2001",

month = jan,

day = "1",

doi = "10.1016/S0129-1564(01)00100-3",

language = "English",

volume = "11",

pages = "789--848",

journal = "International Journal of High Speed Electronics and Systems",

issn = "0129-1564",

publisher = "World Scientific Publishing Co. Pte Ltd",

number = "3",

}

TY - JOUR

T1 - Breakdown modes and breakdown statistics of SiO2 gate oxides

AU - Suñé, J

AU - Jiménez, D

AU - Miranda, null

AU - E., null

PY - 2001/1/1

Y1 - 2001/1/1

U2 - 10.1016/S0129-1564(01)00100-3

DO - 10.1016/S0129-1564(01)00100-3

M3 - Review article

SN - 0129-1564

VL - 11

SP - 789

EP - 848

JO - International Journal of High Speed Electronics and Systems

JF - International Journal of High Speed Electronics and Systems

IS - 3

ER -