TY - BOOK
T1 - BPFET-based RF electronics
T2 - State-of-the-art, small-signal modeling and amplifier design
AU - Valdez-Sandoval, Leslie
AU - Pacheco-Sanchez, Anibal
AU - Jimenez, David
AU - Ramirez-Garcia, Eloy
N1 - Funding Information:
This work has received funding from Instituto Politécnico Nacional under the contract no. SIP 20210167, from European Union’s Horizon 2020 research and innovation programme under grant agreements No GrapheneCore2 785219 and No GrapheneCore3 881603, as well as from Ministerio de Ciencia, Innovación y Universidades under grant agreement RTI2018-097876-B-C21(MCIU/AEI/FEDER, UE). This article has been partially funded by the European Regional Development Funds (ERDF) allocated to the Programa Operatiu FEDER de Catalunya 2014-2020, with the support of the Secretaria d’Universitats i Recerca of the Departament d’Empresa i Coneixement of the Generalitat de Catalunya for emerging technology clusters to carry out valorization and transfer of research results. Reference of the GraphCAT project: 001-P-001702.
Funding Information:
This work has received funding from Instituto Polit ecnico Nacional under the contract no. SIP 20210167, from European Union s Horizon 2020 research and innovation programme under grant agreements No GrapheneCore2 785219 and No GrapheneCore3 881603, as well as from Ministerio de Ciencia, Innovaci on y Universidades under grant agreement RTI2018-097876-B-C21(MCIU/AEI/FEDER, UE). This article has been partially funded by the European Regional Development Funds (ERDF) allocated to the Programa Operatiu FEDER de Catalunya 2014-2020, with the support of the Secretaria d Universitats i Recerca of the Departament d Empresa i Coneixement of the Generalitat de Catalunya for emerging technology clusters to carry out valorization and transfer of research results. Reference of the GraphCAT project: 001-P-001702.
Publisher Copyright:
© 2021 IEEE.
PY - 2020/5/27
Y1 - 2020/5/27
N2 - Black phosphorus (BP) field-effect transistors (FET) have been proposed as a two-dimensional channel device technology able to operate in radiofrequency (RF) applications. A revision of the high-frequency figures of merit of fabricated BPFETs is provided here. Experimentally-calibrated small-signal models of state-of-the-art RF BPFETs have been used to design single- and double-stage amplifiers at 2.4 GHz. Results show that BPFET-based amplifiers are strong candidates for low-power high-selective RF systems.
AB - Black phosphorus (BP) field-effect transistors (FET) have been proposed as a two-dimensional channel device technology able to operate in radiofrequency (RF) applications. A revision of the high-frequency figures of merit of fabricated BPFETs is provided here. Experimentally-calibrated small-signal models of state-of-the-art RF BPFETs have been used to design single- and double-stage amplifiers at 2.4 GHz. Results show that BPFET-based amplifiers are strong candidates for low-power high-selective RF systems.
KW - BPFET
KW - RF amplifier
KW - Small-signal model
UR - http://www.scopus.com/inward/record.url?scp=85123441203&partnerID=8YFLogxK
U2 - 10.1109/LAMC50424.2021.9601637
DO - 10.1109/LAMC50424.2021.9601637
M3 - Proceeding
AN - SCOPUS:85123441203
T3 - 2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020
BT - BPFET-based RF electronics
PB - Institute of Electrical and Electronics Engineers Inc.
ER -