Bohm trajectories for the modeling of tunneling devices

J. Suñé; X. Oriols; J. J. García-García; F. Martín; T. González; J. Mateos; D. Pardo

doi:10.1016/S0167-9317(97)00031-2

Bohm trajectories for the modeling of tunneling devices

J. Suñé, X. Oriols, J. J. García-García, F. Martín, T. González, J. Mateos, D. Pardo

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

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Resum

It is shown that quantum phenomena in electron devices, such as tunneling of electrons, can be modeled using Bohm trajectories. Fowler-Nordheim tunneling in thin-oxide MOS structures and resonant tunneling in double barrier diodes are considered.

Idioma original	Anglès
Pàgines (de-a)	125-128
Revista	Microelectronic Engineering
Volum	36
DOIs	https://doi.org/10.1016/S0167-9317(97)00031-2
Estat de la publicació	Publicada - 1 de gen. 1997

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10.1016/S0167-9317(97)00031-2

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https://www.scopus.com/pages/publications/0031150244

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@article{0899abc5ac6746659e7c7085be9c39fb,

title = "Bohm trajectories for the modeling of tunneling devices",

abstract = "It is shown that quantum phenomena in electron devices, such as tunneling of electrons, can be modeled using Bohm trajectories. Fowler-Nordheim tunneling in thin-oxide MOS structures and resonant tunneling in double barrier diodes are considered.",

author = "J. Su{\~n}{\'e} and X. Oriols and Garc{\'i}a-Garc{\'i}a, \{J. J.\} and F. Mart{\'i}n and T. Gonz{\'a}lez and J. Mateos and D. Pardo",

year = "1997",

month = jan,

day = "1",

doi = "10.1016/S0167-9317(97)00031-2",

language = "English",

volume = "36",

pages = "125--128",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

}

TY - JOUR

T1 - Bohm trajectories for the modeling of tunneling devices

AU - Suñé, J.

AU - Oriols, X.

AU - García-García, J. J.

AU - Martín, F.

AU - González, T.

AU - Mateos, J.

AU - Pardo, D.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - It is shown that quantum phenomena in electron devices, such as tunneling of electrons, can be modeled using Bohm trajectories. Fowler-Nordheim tunneling in thin-oxide MOS structures and resonant tunneling in double barrier diodes are considered.

AB - It is shown that quantum phenomena in electron devices, such as tunneling of electrons, can be modeled using Bohm trajectories. Fowler-Nordheim tunneling in thin-oxide MOS structures and resonant tunneling in double barrier diodes are considered.

UR - https://www.scopus.com/pages/publications/0031150244

U2 - 10.1016/S0167-9317(97)00031-2

DO - 10.1016/S0167-9317(97)00031-2

M3 - Article

SN - 0167-9317

VL - 36

SP - 125

EP - 128

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Bohm trajectories for the modeling of tunneling devices

Resum

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