@book{a434c3bc69e14a9baf0260deb5bc3216,
title = "Beneficial Role of Noise in Hf-based Memristors",
abstract = "The beneficial role of noise in the performance of Hf-based memristors has been experimentally studied. The addition of an external gaussian noise to the bias circuitry positively impacts the memristors characteristics by increasing the OFF/ON resistances ratio. The known stochastic resonance effect has been observed, when changing the standard deviation of the noise. The influence of the additive noise on the memristor current-voltage characteristic and on the set and reset related parameters are also presented.",
keywords = "memristors, resistive switching, RRAM devices, Stochastic resonance",
author = "Rosana Rodriguez and Javier Martin-Martinez and Emili Salvador and Albert Crespo-Yepes and Enrique Miranda and Montserrat Nafria and Antonio Rubio and Vasileios Ntinas and Sirakoulis, {Georgios Ch}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.",
year = "2022",
doi = "10.1109/ISCAS48785.2022.9937850",
language = "English",
series = "Proceedings - IEEE International Symposium on Circuits and Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",
}