TY - JOUR
T1 - Assessment of thermal instabilities and oscillations in multifinger heterojunction bipolar transistors through a harmonic-balance-based CAD-oriented dynamic stability analysis technique
AU - Traversa, Fabio Lorenzo
AU - Cappelluti, Federica
AU - Bonani, Fabrizio
AU - Ghione, Giovanni
PY - 2009/12/1
Y1 - 2009/12/1
N2 - We present a novel analysis of thermal instabilities and oscillations in multifinger heterojunction bipolar transistors (HBTs), based on a harmonic-balance computer-aided-design (CAD)-oriented approach to the dynamic stability assessment. The stability analysis is carried out in time-periodic dynamic conditions by calculating the Floquet multipliers of the limit cycle representing the HBT working point. Such a computation is performed directly in the frequency domain, on the basis of the Jacobian of the harmonic-balance problem yielding the limit cycle. The corresponding stability assessment is rigorous, and the efficient calculation method makes it readily implementable in CAD tools, thus allowing for circuit and device optimization. Results on three-and four-finger layouts are presented, including closed-form oscillation criteria for two-finger devices. © 2009 IEEE.
AB - We present a novel analysis of thermal instabilities and oscillations in multifinger heterojunction bipolar transistors (HBTs), based on a harmonic-balance computer-aided-design (CAD)-oriented approach to the dynamic stability assessment. The stability analysis is carried out in time-periodic dynamic conditions by calculating the Floquet multipliers of the limit cycle representing the HBT working point. Such a computation is performed directly in the frequency domain, on the basis of the Jacobian of the harmonic-balance problem yielding the limit cycle. The corresponding stability assessment is rigorous, and the efficient calculation method makes it readily implementable in CAD tools, thus allowing for circuit and device optimization. Results on three-and four-finger layouts are presented, including closed-form oscillation criteria for two-finger devices. © 2009 IEEE.
KW - Electrothermal effects
KW - Heterojunction bipolar transistors (HBTs)
KW - Stability
UR - https://www.scopus.com/pages/publications/73049088887
U2 - 10.1109/TMTT.2009.2034229
DO - 10.1109/TMTT.2009.2034229
M3 - Article
SN - 0018-9480
VL - 57
SP - 3461
EP - 3468
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
IS - 12
M1 - 5306084
ER -