Application of the Clustering Model to Time-Correlated Oxide Breakdown Events in Multilevel Antifuse Memory Cells

Jordi Munoz Gorriz; Mireia Bargallo Gonzalez; Francesca Campabadal; Jordi Sune; Enrique A. Miranda

doi:10.1109/LED.2020.3033709

Application of the Clustering Model to Time-Correlated Oxide Breakdown Events in Multilevel Antifuse Memory Cells

Jordi Munoz Gorriz^*, Mireia Bargallo Gonzalez, Francesca Campabadal, Jordi Sune, Enrique A. Miranda

^*Autor corresponent d’aquest treball

Departament d'Enginyeria Electrònica

Campus UAB

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

6 Cites (Scopus)

Resum

Time statistics for successive breakdown (BD) events in Al2O3/HfO2-based nanolaminates aimed to the development of multilevel one-time programmable (OTP) memory cells is investigated. The clustering model is shown to account for the departure of the experimental data from the standard Weibull model attributed to the initial leakage current dispersion. An equivalent electrical circuit model is used to represent the stepwise current increase triggered by the appearance of multiple BD sites. Correlation effects in the order statistics are ascribed to a reduction of the effective stress voltage caused by the presence of a series resistance. It is shown that the E -model acceleration law for dielectric BD is consistent with the data obtained from our antifuse cells.

Idioma original	Anglès
Número d’article	9239294
Pàgines (de-a)	1770-1773
Nombre de pàgines	4
Revista	IEEE Electron Device Letters
Volum	41
Número	12
DOIs	https://doi.org/10.1109/LED.2020.3033709
Estat de la publicació	Publicada - de des. 2020

Accés al document

10.1109/LED.2020.3033709

Altres arxius i enllaços

Enllaç a la publicació de Scopus

Com citar-ho

@article{5cad80e3c42946a48fe8f1b0b4979b4e,

title = "Application of the Clustering Model to Time-Correlated Oxide Breakdown Events in Multilevel Antifuse Memory Cells",

abstract = "Time statistics for successive breakdown (BD) events in Al2O3/HfO2-based nanolaminates aimed to the development of multilevel one-time programmable (OTP) memory cells is investigated. The clustering model is shown to account for the departure of the experimental data from the standard Weibull model attributed to the initial leakage current dispersion. An equivalent electrical circuit model is used to represent the stepwise current increase triggered by the appearance of multiple BD sites. Correlation effects in the order statistics are ascribed to a reduction of the effective stress voltage caused by the presence of a series resistance. It is shown that the E -model acceleration law for dielectric BD is consistent with the data obtained from our antifuse cells.",

keywords = "Clustering model, memory, one-time-programmable, OTP, oxide breakdown",

author = "Gorriz, \{Jordi Munoz\} and Gonzalez, \{Mireia Bargallo\} and Francesca Campabadal and Jordi Sune and Miranda, \{Enrique A.\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2020",

month = dec,

doi = "10.1109/LED.2020.3033709",

language = "English",

volume = "41",

pages = "1770--1773",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

Application of the Clustering Model to Time-Correlated Oxide Breakdown Events in Multilevel Antifuse Memory Cells. / Gorriz, Jordi Munoz; Gonzalez, Mireia Bargallo; Campabadal, Francesca et al.
In: IEEE Electron Device Letters, Vol. 41, Núm. 12, 9239294, 12.2020, pàg. 1770-1773.

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

TY - JOUR

T1 - Application of the Clustering Model to Time-Correlated Oxide Breakdown Events in Multilevel Antifuse Memory Cells

AU - Gorriz, Jordi Munoz

AU - Gonzalez, Mireia Bargallo

AU - Campabadal, Francesca

AU - Sune, Jordi

AU - Miranda, Enrique A.

PY - 2020/12

Y1 - 2020/12

N2 - Time statistics for successive breakdown (BD) events in Al2O3/HfO2-based nanolaminates aimed to the development of multilevel one-time programmable (OTP) memory cells is investigated. The clustering model is shown to account for the departure of the experimental data from the standard Weibull model attributed to the initial leakage current dispersion. An equivalent electrical circuit model is used to represent the stepwise current increase triggered by the appearance of multiple BD sites. Correlation effects in the order statistics are ascribed to a reduction of the effective stress voltage caused by the presence of a series resistance. It is shown that the E -model acceleration law for dielectric BD is consistent with the data obtained from our antifuse cells.

AB - Time statistics for successive breakdown (BD) events in Al2O3/HfO2-based nanolaminates aimed to the development of multilevel one-time programmable (OTP) memory cells is investigated. The clustering model is shown to account for the departure of the experimental data from the standard Weibull model attributed to the initial leakage current dispersion. An equivalent electrical circuit model is used to represent the stepwise current increase triggered by the appearance of multiple BD sites. Correlation effects in the order statistics are ascribed to a reduction of the effective stress voltage caused by the presence of a series resistance. It is shown that the E -model acceleration law for dielectric BD is consistent with the data obtained from our antifuse cells.

KW - Clustering model

KW - memory

KW - one-time-programmable

KW - OTP

KW - oxide breakdown

UR - https://www.scopus.com/pages/publications/85097345492

U2 - 10.1109/LED.2020.3033709

DO - 10.1109/LED.2020.3033709

M3 - Article

AN - SCOPUS:85097345492

SN - 0741-3106

VL - 41

SP - 1770

EP - 1773

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

M1 - 9239294

ER -

Application of the Clustering Model to Time-Correlated Oxide Breakdown Events in Multilevel Antifuse Memory Cells

Resum

Accés al document

Altres arxius i enllaços

Fingerprint

Com citar-ho