TY - JOUR
T1 - Analysis on the filament structure evolution in reset transition of Cu/HfO₂/Pt RRAM device
AU - Zhang, Meiyun
AU - Long, Shibing
AU - Li, Yang
AU - Liu, Qi
AU - Lv, Hangbing
AU - Miranda, Enrique
AU - Suñé, Jordi
AU - Liu, Ming
PY - 2016
Y1 - 2016
N2 - The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation). In this study, a statistical evaluation method is developed to analyze the filament structure evolution process in the reset operation of Cu/HfO₂/Pt RRAM device. This method is based on a specific functional relationship between the Weibull slopes of reset parameters' distributions and the CF resistance (R on). The CF of the Cu/HfO₂/Pt device is demonstrated to be ruptured abruptly, and the CF structure of the device has completely degraded in the reset point. Since no intermediate states are generated in the abrupt reset process, it is quite favorable for the reliable and stable one-bit operation in RRAM device. Finally, on the basis of the cell-based analytical thermal dissolution model, a Monte Carlo (MC) simulation is implemented to further verify the experimental results. This work provides inspiration for RRAM reliability and performance design to put RRAM into practical application.
AB - The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation). In this study, a statistical evaluation method is developed to analyze the filament structure evolution process in the reset operation of Cu/HfO₂/Pt RRAM device. This method is based on a specific functional relationship between the Weibull slopes of reset parameters' distributions and the CF resistance (R on). The CF of the Cu/HfO₂/Pt device is demonstrated to be ruptured abruptly, and the CF structure of the device has completely degraded in the reset point. Since no intermediate states are generated in the abrupt reset process, it is quite favorable for the reliable and stable one-bit operation in RRAM device. Finally, on the basis of the cell-based analytical thermal dissolution model, a Monte Carlo (MC) simulation is implemented to further verify the experimental results. This work provides inspiration for RRAM reliability and performance design to put RRAM into practical application.
KW - RRAM
KW - Conductive filament (CF)
KW - Structure evolution
KW - Monte Carlo simulator
UR - https://www.scopus.com/pages/publications/84978975969
U2 - 10.1186/s11671-016-1484-8
DO - 10.1186/s11671-016-1484-8
M3 - Article
C2 - 27389343
SN - 1931-7573
VL - 11
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
ER -