Resum
The trapped charge distributions in oxides subjected to static and dynamic stress conditions have been measured. The DC distributions have been related to the oxide reliability and explained in terms of a microscopic degradation model. These results are extrapolated to the dynamic case. © 1997 Elsevier Science Ltd.
Idioma original | English |
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Pàgines (de-a) | 1517-1520 |
Revista | Microelectronics Reliability |
Volum | 37 |
DOIs | |
Estat de la publicació | Publicada - 1 de gen. 1997 |