Analysis of set and reset mechanisms in Ni/HfO<inf>2</inf>-based RRAM with fast ramped voltages

M. Maestro, J. Martin-Martinez, J. Diaz, A. Crespo-Yepes, M. B. Gonzalez, R. Rodriguez, F. Campabadal, M. Nafria, X. Aymerich

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Resum

© 2015 Elsevier B.V. The resistive switching phenomenon is analyzed using a purposely developed setup which allows fast ramped voltages and measurements in the time domain. Taking advantage of these capabilities, the Set and Reset processes in Ni/HfO2 structures have been studied for a large range of voltage ramp speeds. The results obtained show that Set and Reset voltages increase with voltage ramp speed. The use of time domain measurements has allowed concluding that a critical energy is needed to trigger the Set and Reset processes, independently of the biasing conditions.
Idioma originalEnglish
Pàgines (de-a)176-179
RevistaMicroelectronic Engineering
Volum147
DOIs
Estat de la publicacióPublicada - 1 de nov. 2015

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