Analysis of Body Bias and RTN-Induced Frequency Shift of Low Voltage Ring Oscillators in FDSOI Technology

Enrique Barajas, Xavier Aragonés, Diego Mateo, Francesc Moll, Antonio Rubio, Javier Martín-Martínez, Rosana Rodríguez, Marc Portí, Montse Nafría, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández

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Resum

Electronic circuits powered at ultra low voltages (500 mV and below) are desirable for their low energy and power consumption. However, RTN (Random Telegraph Noise)-induced threshold voltage variations become very significant at such supply voltages. This paper evaluates the impact of RTN on additional jitter in a ring oscillator. Since FDSOI allows a large range of body bias voltages, this work studies how body biasing affects the oscillation frequency but also the jitter effects. The impact of RTN in NMOS and PMOS devices on frequency as well as the levels of supplementary jitter introduced by RTN are evaluated and compared with classical device noise.

Idioma originalEnglish
EditorInstitute of Electrical and Electronics Engineers Inc.
Nombre de pàgines6
ISBN (imprès)9781538663653
DOIs
Estat de la publicacióPublicada - 12 de set. 2018

Sèrie de publicacions

Nom2018 IEEE 28th International Symposium on Power and Timing Modeling, Optimization and Simulation, PATMOS 2018

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