An improved analytical model for the statistics of SET emergence point in HfO <inf>2</inf> memristive device

Dong Xiang; Rulin Zhang; Yu Li; Cong Ye; Enrique Miranda; Jordi Suñé; Shibing Long

doi:10.1063/1.5085685

An improved analytical model for the statistics of SET emergence point in HfO <inf>2</inf> memristive device

Dong Xiang, Rulin Zhang, Yu Li, Cong Ye, Enrique Miranda, Jordi Suñé, Shibing Long

Departament d'Enginyeria Electrònica

Producció científica: Contribució a revista › Article › Recerca

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© 2019 Author(s). In this work, an improved analytical model for the SET switching statistics of HfO 2 memristive device is developed from the cell-based percolation model. The statistical results of the SET emergence point related to the beginning stage during SET process are systematically discussed. Moreover, the deviation from Weibull model in high percentiles region is found to originate from the uneven distribution of defect density. Our improved model exhibits excellent consistency with experimental results in Cu/HfO 2 /Pt device. Besides, we explain the relationship between the parameters of the model and SET resistance. The underlying mechanism of SET process for HfO 2 memristive device is fully illuminated.

Idioma original	Anglès
Número d’article	025118
Revista	AIP Advances
Volum	9
DOIs	https://doi.org/10.1063/1.5085685
Estat de la publicació	Publicada - 1 de febr. 2019

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10.1063/1.5085685

https://ddd.uab.cat/record/223905

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http://www.mendeley.com/research/improved-analytical-model-statistics-set-emergence-point-hfo-2-memristive-device

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title = "An improved analytical model for the statistics of SET emergence point in HfO 2 memristive device",

abstract = "{\textcopyright} 2019 Author(s). In this work, an improved analytical model for the SET switching statistics of HfO 2 memristive device is developed from the cell-based percolation model. The statistical results of the SET emergence point related to the beginning stage during SET process are systematically discussed. Moreover, the deviation from Weibull model in high percentiles region is found to originate from the uneven distribution of defect density. Our improved model exhibits excellent consistency with experimental results in Cu/HfO 2 /Pt device. Besides, we explain the relationship between the parameters of the model and SET resistance. The underlying mechanism of SET process for HfO 2 memristive device is fully illuminated.",

author = "Dong Xiang and Rulin Zhang and Yu Li and Cong Ye and Enrique Miranda and Jordi Su{\~n}{\'e} and Shibing Long",

year = "2019",

month = feb,

day = "1",

doi = "10.1063/1.5085685",

language = "English",

volume = "9",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - An improved analytical model for the statistics of SET emergence point in HfO 2 memristive device

AU - Xiang, Dong

AU - Zhang, Rulin

AU - Li, Yu

AU - Ye, Cong

AU - Miranda, Enrique

AU - Suñé, Jordi

AU - Long, Shibing

PY - 2019/2/1

Y1 - 2019/2/1

N2 - © 2019 Author(s). In this work, an improved analytical model for the SET switching statistics of HfO 2 memristive device is developed from the cell-based percolation model. The statistical results of the SET emergence point related to the beginning stage during SET process are systematically discussed. Moreover, the deviation from Weibull model in high percentiles region is found to originate from the uneven distribution of defect density. Our improved model exhibits excellent consistency with experimental results in Cu/HfO 2 /Pt device. Besides, we explain the relationship between the parameters of the model and SET resistance. The underlying mechanism of SET process for HfO 2 memristive device is fully illuminated.

AB - © 2019 Author(s). In this work, an improved analytical model for the SET switching statistics of HfO 2 memristive device is developed from the cell-based percolation model. The statistical results of the SET emergence point related to the beginning stage during SET process are systematically discussed. Moreover, the deviation from Weibull model in high percentiles region is found to originate from the uneven distribution of defect density. Our improved model exhibits excellent consistency with experimental results in Cu/HfO 2 /Pt device. Besides, we explain the relationship between the parameters of the model and SET resistance. The underlying mechanism of SET process for HfO 2 memristive device is fully illuminated.

UR - http://www.mendeley.com/research/improved-analytical-model-statistics-set-emergence-point-hfo-2-memristive-device

U2 - 10.1063/1.5085685

DO - 10.1063/1.5085685

M3 - Article

SN - 2158-3226

VL - 9

JO - AIP Advances

JF - AIP Advances

M1 - 025118

ER -

An improved analytical model for the statistics of SET emergence point in HfO <inf>2</inf> memristive device

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